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PDF MTB050P10F3 Data sheet ( Hoja de datos )
| Número de pieza | MTB050P10F3 | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB050P10F3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C975F3
Issued Date : 2014.08.13
Revised Date : 2014.10.02
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB050P10F3
BVDSS
ID @ VGS=-10V
RDSON(TYP) @ VGS=-10V, ID=-20A
RDSON(TYP) @ VGS=-4.5V, ID=-15A
-100V
-40A
46mΩ
52mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
MTB050P10F3
Outline
TO-263
G：Gate
D：Drain
S：Source
G DS
Ordering Information
Device
MTB050P10F3-0-T7-S
Package
Shipping
TO-263
(Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB050P10F3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C975F3
Issued Date : 2014.08.13
Revised Date : 2014.10.02
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C oss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=-1mA
1
0.8
100
0.1
Crss
1 10
-VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=-5V
Pulsed
Ta=25°C
0.01 0.1
1
10
-ID, Drain Current(A)
100
0.6 ID=-250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=-50V
8 ID=-21A
6
4
2
0
0 10 20 30 40 50 60
Total Gate Charge---Qg(nC)
Maximum Safe Operating Area
1000
Maximum Drain Current vs Case Temperature
50
RDS(ON)
100 Limit
10μs
100μ s
10
1 TC=25°C, Tj=175°C,
VGS=10V,RθJC=0.75°C/W
single pulse
1ms
10ms
100ms
DC
0.1
0.1
1 10 100
-VDS, Drain-Source Voltage(V)
1000
40
30
20
10
VGS=10V, RθJC=0.75°C/W
0
0 25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTB050P10F3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB050P10F3.PDF ] | |
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