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부품번호 | MTB080P06N3 기능 |
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기능 | P-Channel Enhancement Mode Power MOSFET | ||
제조업체 | Cystech Electonics | ||
로고 | |||
CYStech Electronics Corp.
Spec. No. : C069N3
Issued Date : 2016.03.24
Revised Date :
Page No. : 1/ 9
P-Channel Enhancement Mode MOSFET
MTB080P06N3
BVDSS
ID@VGS=-10V, TA=25°C
RDSON(TYP)
VGS=-10V, ID=-2A
VGS=-4.5V, ID=-1.7A
-60V
-2.5A
80mΩ
109mΩ
Features
•Advanced trench process technology
•High density cell design for ultra low on resistance
•Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB080P06N3
Outline
SOT-23
D
G:Gate
S:Source
D:Drain
GS
Ordering Information
Device
MTB080P06N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB080P06N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C069N3
Issued Date : 2016.03.24
Revised Date :
Page No. : 4/ 9
Typical Characteristics
Typical Output Characteristics
10
10V,9V,8V,7V,6V,5V, 4.5V
8
4V
6
3.5V
4
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1.0
0.8
2 -VGS=3V
0
012345
-VDS, Drain-Source Voltage(V)
0.6 ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
200
180
160
140
120 VGS=-4.5V
100
80
60
VGS=-10V
40
20
0
0.01
0.1 1
-ID, Drain Current(A)
10
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1.0
Tj=25°C
0.8
0.6 Tj=150°C
0.4
0.2
0
2 46 8
-IDR, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
ID=-2A
400
300
200
100
0
0 2 4 6 8 10
-VGS, Gate-Source Voltage(V)
Drain-Source On-State Resistance vs Junction Tempearture
2.0
1.8 VGS=-10V, ID=-2A
1.6
1.4
1.2
1.0
0.8
0.6 RDS(ON)@Tj=25°C : 80 mΩ typ
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB080P06N3
CYStek Product Specification
4페이지 CYStech Electronics Corp.
Reel Dimension
Spec. No. : C069N3
Issued Date : 2016.03.24
Revised Date :
Page No. : 7/ 9
Carrier Tape Dimension
MTB080P06N3
CYStek Product Specification
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ MTB080P06N3.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MTB080P06N3 | P-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
MTB080P06N6 | P-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |