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부품번호 | MTB110P08KJ3 기능 |
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기능 | P-Channel Enhancement Mode Power MOSFET | ||
제조업체 | Cystech Electonics | ||
로고 | |||
CYStech Electronics Corp.
Spec. No. : C123J3
Issued Date : 2016.07.20
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB110P08KJ3 BVDSS
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
RDS(ON)@VGS=-10V, ID=-5A
RDS(ON)@VGS=-4.5V, ID=-3A
Features
• Low Gate Charge
• Simple Drive Requirement
• ESD Protected Gate
• Pb-free Lead Plating & Halogen-free Package
-80V
-11.3A
-3.2A
103mΩ(typ)
141mΩ(typ)
Equivalent Circuit
MTB110P08KJ3
Outline
TO-252(DPAK)
G:Gate
D:Drain
S:Source
G DS
Ordering Information
Device
MTB110P08KJ3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB110P08KJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C123J3
Issued Date : 2016.07.20
Revised Date :
Page No. : 4/9
Typical Characteristics
20
18
16
14
12
10
8
6
4
2
0
0
Typical Output Characteristics
10V,9V,8V,7V,6V
5V
4.5V
4V
-VGS=3V
3.5V
2 46 8
-VDS, Drain-Source Voltage(V)
10
Static Drain-Source On-State resistance vs Drain Current
500
400
In descending order
300
VGS= -4.5V
-10V
200
100
0
0.01
0.1 1 10
-ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1000
ID=-5A
800
600
400
200
0
0 2 4 6 8 10
-VGS, Gate-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1.0
0.8
0.6 ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1.0
Tj=25°C
0.8
0.6 Tj=150°C
0.4
0.2
0
2 46 8
-IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2.2 VGS=-10V, ID=-5A
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4 RDS(ON)@Tj=25°C : 103mΩ typ.
0.2
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB110P08KJ3
CYStek Product Specification
4페이지 Reel Dimension
CYStech Electronics Corp.
Spec. No. : C123J3
Issued Date : 2016.07.20
Revised Date :
Page No. : 7/9
Carrier Tape Dimension
MTB110P08KJ3
CYStek Product Specification
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ MTB110P08KJ3.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MTB110P08KJ3 | P-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |