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PDF MTB2D5N03BE3 Data sheet ( Hoja de datos )
| Número de pieza | MTB2D5N03BE3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB2D5N03BE3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB2D5N03BE3
Spec. No. : C998E3
Issued Date : 2016.08.01
Revised Date :
Page No. : 1/ 8
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=4.5V, ID=20A
30V
111A(Si limit)
66A(PKG limit)
17.5A
3.5 mΩ(typ)
4.6 mΩ(typ)
Symbol
MTB2D5N03BE3
Outline
TO-220
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
MTB2D5N03BE3-0-UB-X
Package
TO-220
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB2D5N03BE3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C998E3
Issued Date : 2016.08.01
Revised Date :
Page No. : 5/ 8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
1000
C oss
100
0
100
10
Crss
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
VDS=10V
0.8
0.6
ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
1 VDS=15V
4
0.1 Ta=25°C
Pulsed
0.01
0.001
0.01 0.1 1 10
ID, Drain Current(A)
100
Maximum Safe Operating Area
1000
RDSON
Limited
100
10
1 TC=25°C, Tj=150°C
VGS=10V, RθJC=1.5°C/W
Single Pulse
0.1
0.1
1 10
VDS, Drain-Source Voltage(V)
10μs
100μs
1ms
10ms
100ms
DC
100
VDS=15V
2 ID=30A
0
0 10 20 30 40 50 60
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
120
100 Silicon Limit
80
60
Package Limit
40
20
0
25
VGS=10V, RθJC=1.5°C/W
50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTB2D5N03BE3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTB2D5N03BE3.PDF ] | |
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