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부품번호 | MTB5D0P03H8 기능 |
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기능 | P-Channel Enhancement Mode Power MOSFET | ||
제조업체 | Cystech Electonics | ||
로고 | |||
CYStech Electronics Corp.
Spec. No. : C965H8
Issued Date : 2014.12.12
Revised Date : 2015.03.26
Page No. : 1/ 9
P-Channel Enhancement Mode Power MOSFET
MTB5D0P03H8 BVDSS
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
RDSON(TYP)
VGS=-10V, ID=-20A
VGS=-4.5V, ID=-17A
-30V
-90A
-22A
3.2mΩ
5.1mΩ
Symbol
MTB5D0P03H8
Outline
Pin 1
EDFN5×6
G:Gate D:Drain S:Source
Ordering Information
Device
MTB5D0P03H8-0-T6-G
Package
DFN5×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB5D0P03H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C965H8
Issued Date : 2014.12.12
Revised Date : 2015.03.26
Page No. : 4/ 9
Typical Characteristics
Typical Output Characteristics
200
10V,9V,8V,7V,6V,5V,4.5V,4V
160
-VGS=3.5V
120
-VGS=3V
80
40
0
0
-VGS=2.5V
-VGS=2V
1 23 4
-VDS, Drain-Source Voltage(V)
5
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6 ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
100
90 In descending order
80
VGS=-2.5V
-3V
70 -4.5V
60 -10V
50
40
30
20
10
0
0.01
0.1 1 10
-ID, Drain Current(A)
100
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6 Tj=150°C
0.4
0.2
0
5 10 15 20 25 30 35 40
-IDR, Reverse Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90 ID=-20A
80
70
60
50
40
30
20
10
0
0 2 4 6 8 10
-VGS, Gate-Source Voltage(V)
Drain-Source On-State Resistance vs Junction Tempearture
3
2.5 VGS=-10V, ID=-20A
2
1.5
1
0.5 RDS(ON)@Tj=25°C : 3.2mΩ typ
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTB5D0P03H8
CYStek Product Specification
4페이지 Reel Dimension
CYStech Electronics Corp.
Spec. No. : C965H8
Issued Date : 2014.12.12
Revised Date : 2015.03.26
Page No. : 7/ 9
Carrier Tape Dimension
Pin #1
MTB5D0P03H8
CYStek Product Specification
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ MTB5D0P03H8.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MTB5D0P03H8 | P-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |