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PDF 2SJ673 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ673 | |
| Descripción | P-CHANNEL POWER MOS FET | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ673
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ673 is P-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance
RDS(on)1 = 20 mΩ MAX. (VGS = −10 V, ID = −18 A)
RDS(on)2 = 31 mΩ MAX. (VGS = −4.0 V, ID = −18 A)
• Low Ciss: Ciss = 4600 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
2SJ673
PACKAGE
Isolated TO-220 (MP-45F)
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
−60
m20
m36
m144
32
Total Power Dissipation (TA = 25°C)
PT2
2.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg −55 to +150
IAS −36
EAS 130
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = 20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17210EJ1V0DS00 (1st edition)
Date Published June 2004 NS CP(K)
Printed in Japan
2004
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
ID = −18 A
40 Pulsed
VGS = −4.0 V
30
−4.5 V
−10 V
20
10
0
-50
0 50 100
Tch - Channel Temperature - °C
150
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
Coss
100
-0.1
Crss
-1 -10
VDS - Drain to Source Voltage - V
-100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
55
50
45
40
35
30
25
20
15
10
5
0
0
VDD = −48 V
−30 V
−12 V
VGS
VDS
20 40 60
12
ID = −25 A 11
10
9
8
7
6
5
4
3
2
1
0
80 100
QG - Gate Charge - nC
2SJ673
-1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-100 VGS = −10 V
-10 −4 V
-1 0 V
-0.1
-0.01
-0.001
0
Pulsed
-0.5 -1 -1.5
VF(S-D) - Source to Drain Voltage - V
-2
1000
SWITCHING CHARACTERISTICS
100
10
VDD = −30 V
VGS = −10 V
RG = 0 Ω
1
-0.1 -1
-10
ID - Drain Current - A
td(off)
tf
tr
td(on)
-100
1000
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1 10
IF - Diode Forward Current - A
100
Data Sheet D17210EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SJ673.PDF ] | |
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