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KAF-0402-ABA 데이터시트 PDF




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기능 CCD Image Sensor
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KAF-0402-ABA 데이터시트, 핀배열, 회로
KAF-0402
768 (H) x 512 (V) Full Frame
CCD Image Sensor
Description
The KAF−0402 Image Sensor is a high performance area CCD
(charge-coupled device) image sensor with 768 (H) × 512 (V)
photoactive pixels designed for a wide range of image sensing
applications.
The sensor incorporates true two-phase CCD technology,
simplifying the support circuits required to drive the sensor as well as
reducing dark current without compromising charge capacity.
The sensor also utilizes the TRUESENSE Transparent Gate Electrode
to improve sensitivity compared to the use of a standard front side
illuminated polysilicon electrode.
Optional microlenses focus the majority of the light through the
transparent gate, increasing the optical response further.
Table 1. GENERAL SPECIFICATIONS
Parameter
Typical Value
Architecture
Full Frame CCD, Enhanced
Response
Total Number of Pixels
784 (H) × 520 (V)
Number of Active Pixels
768 (H) × 512 (V) = approx. 0.4 Mp
Pixel Size
9.0 mm (H) × 9.0 mm (V)
Active Image Size
6.91 mm (H) × 4.6 mm (V)
8.3 mm (Diagonal)
1/2Optical Format
Die Size
8.4 mm (H) × 5.5 mm (V)
Aspect Ratio
3:2
Saturation Signal
100,000 electrons
Quantum Efficiency
(with Microlens)
Peak: 77%
400 nm: 45%
Quantum Efficiency
(No Microlens)
Peak: 65%
400 nm: 30%
Output Sensitivity
10 mV/e
Read Noise
Dark Current
15 electrons
< 10 pA/cm2 at 25°C
Dark Current Doubling Temperature 6.3°C
Dynamic Range
76 dB
Charge Transfer Efficiency
> 0.99999
Blooming Suppression
None
Maximum Date Rate
10 MHz
Package
CERDIP Package (Sidebrazed)
Cover Glass
Clear or AR Coated, 2 Sides
NOTE: Parameters above are specified at T = 25°C unless otherwise noted.
www.onsemi.com
Figure 1. KAF−0402 Full Frame CCD
Image Sensor
Applications
Digitization
Medical
Scientific
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 2
1
Publication Order Number:
KAF−0402/D




KAF-0402-ABA pdf, 반도체, 판매, 대치품
KAF−0402
H1
H2
H1
H2
VOG
R
VRD
HCCD
Charge
Transfer
Floating
Diffusion
VDD
VOUT
Source
Follower
#1
Figure 4. Output Schematic
Source
Follower
#2
Output Structure
Charge presented to the floating diffusion is converted
into a voltage and current amplified in order to drive off-chip
loads. The resulting voltage change seen at the output is
linearly related to the amount of charge placed on the
floating diffusion. Once the signal has been sampled by the
system electronics, the reset gate (fR) is clocked to remove
the signal and the floating diffusion is reset to the potential
applied by Vrd (see Figure 4). More signal at the floating
diffusion reduces the voltage seen at the output pin. In order
to activate the output structure, an off-chip load must be
added to the Vout pin of the device such as shown in
Figure 8.
Dark Reference Pixels
There are 4 light shielded pixels at the beginning of each
line, and 12 at the end. There are 4 dark lines at the start of
every frame and 4 dark lines at the end of each frame. Under
normal circumstances, these pixels do not respond to light.
However, dark reference pixels in close proximity to an
active pixel can scavenge signal depending on light intensity
and wavelength and therefore will not represent the true dark
signal.
Dummy Pixels
Within the horizontal shift register are 10 leading
additional pixels that are not associated with a column of
pixels within the vertical register. These pixels contain only
horizontal shift register dark current signal and do not
respond to light. A few leading dummy pixels may scavenge
false signal depending on operating conditions. There are
two more dummy pixels at the end of each line.
Image Acquisition
An electronic representation of an image is formed when
incident photons falling on the sensor plane create
electron-hole pairs within the sensor. These photon induced
electrons are collected locally by the formation of potential
wells at each photogate or pixel site. The number of
electrons collected is linearly dependent on light level and
exposure time and non-linearly dependent on wavelength.
When the pixel’s capacity is reached, excess electrons will
leak into the adjacent pixels within the same column. This
is termed blooming. During the integration period, the fV1
and fV2 register clocks are held at a constant (low) level.
See Figure 9.
Charge Transport
Referring again to Figure 10, the integrated charge from
each photogate is transported to the output using a two-step
process. Each line (row) of charge is first transported from
the vertical CCD to the horizontal CCD register using the
fV1 and fV2 register clocks. The horizontal CCD is
presented a new line on the falling edge of fV2 while fH1
is held high. The horizontal CCD then transports each line,
pixel by pixel, to the output structure by alternately clocking
the fH1 and fH2 pins in a complementary fashion. On each
falling edge of fH2 a new charge packet is transferred onto
a floating diffusion and sensed by the output amplifier.
www.onsemi.com
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KAF-0402-ABA 전자부품, 판매, 대치품
TYPICAL PERFORMANCE CURVES
KAF−0402
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
400
KAF−0402 Spectral Response
KAF−0402 (with microlenses)
KAF−0402 (no microlenses)
500 600 700 800 900 1000
Wavelength (nm)
Figure 6. Typical Spectral Response
www.onsemi.com
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부품번호상세설명 및 기능제조사
KAF-0402-ABA

CCD Image Sensor

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