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KAF-09000 데이터시트 PDF




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부품번호 KAF-09000 기능
기능 CCD Image Sensor
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KAF-09000 데이터시트, 핀배열, 회로
KAF-09000
3056 (H) x 3056 (V) Full
Frame CCD Image Sensor
Description
Combining high resolution with outstanding sensitivity, the
KAF09000 image sensor has been specifically designed to meet the
needs of nextgeneration low cost digital radiography and scientific
imaging systems. The high sensitivity available from 12micron
square pixels combines with a low noise architecture to allow system
designers to improve overall image quality, or to relax system
tolerances to achieve lower cost. The excellent uniformity of the
KAF09000 image sensor improves overall image integrity by
simplifying image corrections, while integrated antiblooming
protection prevents image bleed from overexposure in bright areas of
the image. To simplify device integration, the KAF09000 image
sensor uses the same pinout and package as the KAF16801 image
sensor.
The sensor utilizes the TRUESENSE Transparent Gate Electrode to
improve sensitivity compared to the use of a standard frontside
illuminated polysilicon electrode.
Table 1. GENERAL SPECIFICATIONS
Parameter
Typical Value
Architecture
Full Frame CCD [Square Pixels]
Total Number of Pixels
3103 (H) x 3086 (V) = 9.6 Mp
Number of Effective Pixels
3085 (H) x 3085 (V) = 9.5 Mp
Number of Active Pixels
3056 (H) x 3056 (V) = 9.3 Mp
Pixel Size
Active Image Size
12 mm (H) x 12 mm (V)
36.7 mm (H) x 36.7 mm (V)
51.9 mm diagonal,
645 1.3x optical format
Aspect Ratio
Square
Horizontal Outputs
Saturation Signal
Output Sensitivity
Quantum Efficiency (550 nm)
Responsivity (550 nm)
Read Noise (f = 3 MHz)
1
110 ke
24 mV/e
64%
2595 ke/mJ/cm2
62.3 V/mJ/cm2
7 e
Dark Signal (T = 25°C)
5 e/pix/sec
Dark Current Doubling Temperature 7°C
Linear Dynamic Range (f = 4 MHz) 84 dB
Blooming Protection
(4 ms exposure time)
> 100 X saturation exposure
Maximum Data Rate
10 MHz
Package
CERDIP, (sidebrazed pins, CuW)
Cover Glass
AR coated 2 sides Taped Clear
NOTE: Parameters above are specified at T = 25°C unless otherwise noted.
© Semiconductor Components Industries, LLC, 2015
February, 2015 Rev. 3
1
www.onsemi.com
Figure 1. KAF09000 CCD Image Sensor
Features
TRUESENSE Transparent Gate Electrode
for High Sensitivity
Large Pixel Size
Large Image Area
High Quantum Efficiency
Low Noise Architecture
Broad Dynamic Range
Applications
Medical
Scientific
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Publication Order Number:
KAF09000/D




KAF-09000 pdf, 반도체, 판매, 대치품
HORIZONTAL REGISTER
Output Structure
H2
H1
OG
RG
RD
KAF09000
HCCD
Charge
Transfer
VDD
Floating
Diffusion
VOUT
VSS
Source
Source
Source
Follower Follower
Follower
#1 #2
#3
Figure 3. Output Architecture (Left or Right)
The output consists of a floating diffusion capacitance
connected to a threestage source follower. Charge
presented to the floating diffusion (FD) is converted into a
voltage and is current amplified in order to drive offchip
loads. The resulting voltage change seen at the output is
linearly related to the amount of charge placed on the FD.
Once the signal has been sampled by the system electronics,
the reset gate (RG) is clocked to remove the signal and FD
is reset to the potential applied by reset drain (RD).
Increased signal at the floating diffusion reduces the voltage
seen at the output pin. To activate the output structure, an
offchip current source must be added to the VOUT pin of
the device. See Figure 4.
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KAF-09000 전자부품, 판매, 대치품
KAF09000
IMAGING PERFORMANCE
Table 4. TYPICAL OPERATIONAL CONDITIONS
Description
Condition Unless otherwise noted
Read out time treadout
2533 ms
Integration time (tint)
variable
Horizontal clock frequency
4 MHz
Temperature
25°C
Mode
integrate – readout cycle
Operation
Nominal operating voltages and timing with min. vertical
pulse width tVw = 20 ms
Notes
Includes over clock pixels
Room temperature
Table 5. SPECIFICATIONS
Description
Symbol
Min.
Nom.
Max.
Units
Notes Verification Plan
Saturation Signal
Quantum Efficiency (550 nm)
Nesat
QE
95k 110k
64
e
%1
die11
design12
Photo Response NonLinearity
PRNL
1
%2
design12
Photo Response NonUniformity
PRNU
0.5 2.5
%
3
die11
Integration Dark Signal
Vdark, int
5
20 e/pix/sec
4
die11
0.6 2.8 pA/cm2
Read out Dark Signal
Vdark, read
80
320 electrons
5
die11
Dark Signal NonUniformity
DSNU
20 e/pix/sec
6
die11
Dark Signal Doubling Temperature
ΔT
7 °C
design12
Read Noise
NR
7 14 erms 7
design12
Linear Dynamic Range
DR
84
dB 8
design12
Blooming Protection
Xab 100
x Vsat
9
design12
Output Amplifier Sensitivity
Vout/Ne
24
mV/e
design12
DC Offset, output amplifier
Vodc
Vrd4 Vrd2.0
V 10
die11
Output Amplifier Bandwidth
Output Impedance, Amplifier
f3dB
ROUT
88
150 250
MHz
W
design12
die11
1. Increasing output load currents to improve bandwidth will decrease these values.
2. Worst case deviation from straight line fit, between 1% and 90% of Vsat.
3. One Sigma deviation of a 128 x 128 sample when CCD illuminated uniformly.
4. Average of all pixels with no illumination at 25°C.
5. Read out dark current depends on the read out time, primarily when the vertical CCD clocks are at their high levels. This is approximately
0.125 sec/image for nominal timing conditions, tVw = 20 ms. The read out dark current will increase as tVw is increased. The readout dark
current is also dependent on the operating temperature. The specification applies to 25°C.
6. Average integration dark signal of any of 32 x 32 blocks within the sensor. (each block is 128 x 128 pixels)
7. Output amplifier noise only. Operating at pixel frequency up to 4 MHz, bandwidth <20 MHz, tint = 0, and no dark current shot noise.
8. 20log (Vsat/VN)
9. Xab is the number of times above the Vsat illumination level that the sensor will bloom by spot size doubling. The spot size is 10% of the
imager height. Xab is measured at 4 ms.
10. Video level offset with respect to ground.
11. A parameter that is measured on every sensor during production testing.
12. A parameter that is quantified during the design verification activity.
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