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KAI-04070-FBA 데이터시트 PDF




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기능 CCD IMAGE SENSOR
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KAI-04070-FBA 데이터시트, 핀배열, 회로
KAI-04070
2048 (H) x 2048 (V) Interline
CCD Image Sensor
Description
The KAI−04070 Image Sensor is a 4-megapixel CCD in a 4/3 inch
optical format. Based on the TRUESENSE 7.4 micron Interline
Transfer CCD Platform, the sensor provides very high smear rejection
and up to 82 dB linear dynamic range through the use of a unique
dual-gain amplifier. A flexible readout architecture enables use of 1, 2,
or 4 outputs for full resolution readout up to 28 frames per second,
while a vertical overflow drain structure suppresses image blooming
and enables electronic shuttering for precise exposure control.
Table 1. GENERAL SPECIFICATIONS
Parameter
Architecture
Total Number of Pixels
Number of Effective Pixels
Number of Active Pixels
Pixel Size
Active Image Size
Aspect Ratio
Number of Outputs
Charge Capacity
Output Sensitivity
Quantum Efficiency
Pan (−ABA, −PBA, −QBA)
R, G, B (−CBA)
R, G, B (−FBA)
Read Noise (f = 40 MHz)
Dark Current
Photodiode
VCCD
Typical Value
Interline CCD, Progressive Scan
2128 (H) × 2112 (V)
2080 (H) × 2080 (V)
2048 (H) × 2048 (V)
7.4 mm (H) × 7.4 mm (V)
15.2 mm (H) × 15.2 mm (V),
21.4 mm (Diagonal),
4/3Optical Format
1:1
1, 2, or 4
44,000 electrons
8.7 mV/e(Low), 33 mV/e(High)
52%
38%, 42%, 43%
37%, 42%, 41%
12 erms
3 e/s
145 e/s
Dark Current Doubling Temp.
Photodiode
VCCD
7°C
9°C
Dynamic Range
High Gain Amp (40 MHz)
Dual Amp, 2×2 Bin (40 MHz)
70 dB
82 dB
Charge Transfer Efficiency
Blooming Suppression
Smear
Image Lag
Maximum Pixel Clock Speed
Maximum Frame Rate
Quad Output
Dual Output
Single Output
0.999999
> 1000 X
−115 dB
< 10 electrons
40 MHz
28 fps
14 fps
8 fps
Package
68 Pin PGA
Cover Glass
AR Coated, 2 Sides
NOTE: All Parameters are specified at T = 40°C unless otherwise noted.
www.onsemi.com
Figure 1. KAI−04070 Interline CCD
Image Sensor
Features
Superior Smear Rejection
Up to 82 dB Linear Dynamic Range
Bayer Color Pattern, TRUESENSE Sparse
Color Filter Pattern, and Monochrome
Configurations
Progressive Scan & Flexible Readout
Architecture
High Frame Rate
High Sensitivity − Low Noise Architecture
Package Pin Reserved for Device
Identification
Application
Industrial Imaging and Inspection
Traffic
Surveillance
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 3
1
Publication Order Number:
KAI−04070/D




KAI-04070-FBA pdf, 반도체, 판매, 대치품
KAI−04070
Bayer Color Filter Pattern
RDcd
RDcd
R2cd
R1c
VDDc
ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑVOUTc
ÌÌÌÌÌÌÌÌÌÌÌÌÌÌGND
OGc
ÌÌÌÌÌÌÌÌÌÌÌÌÌÌH2SLc
HLOD
1 11 24 16
1024
BG
1 Dummy
16
16
1024
186 24 11 1
BG
R2cd
R1d
VDDd
VOUTd
GND
OGd
H2SLd
V1T G R
G R V1T
V2T V2T
V3T V3T
V4T V4T
DevID
ESD 24 16
2048 (H) × 2048 (V)
7.4 mm × 7.4 mm Pixels
16 24 ESD
V1B V1B
V2B V2B
V3B V3B
V4B B G
B G V4B
RDab
R2ab
ÌÌÌÌÌÌÌÌÌÌÌÌÌÌR1a
VDDa
ÌÑÌÑÌÑÌÑÌÑÌÑÌÑÌÑÌÑÌÑÌÑÌÑÌÑÌÑVOUTa
GR GR
16 Buffer
16 Dark
1 Dummy (Last VCCD Phase = V1 H1S)
1 11 24 186
1024
HLOD
1024
186 24 11 1
RDab
R2ab
R1b
VDDb
VOUTb
GND
GND
OGa
OGb
H2SLa
H2SLb
Figure 3. Bayer Color Filter Pattern
TRUESENSE Sparse Color Filter Pattern
RDcd
RDcd
R2cd
R1c
ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑVDDc
VOUTc
ÌÌÌÌÌÌÌÌÌÌÌÌÌÌGND
ÌÌÌÌÌÌÌÌÌÌÌÌÌÌOGc
H2SLc
HLOD
1 11 24 16
1024
1 Dummy
16
16
1024
186 24 11 1
GPRP
GPRP
R2cd
R1d
VDDd
VOUTd
GND
OGd
H2SLd
V1T P G P R
V2T B P G P
V3T P B P G
PGPR
BPGP
PBPG
V1T
V2T
V3T
V4T V4T
DevID
ESD 24 16
2048 (H) × 2048 (V)
7.4 mm × 7.4 mm Pixels
16 24 ESD
V1B V1B
V2B G P R P
V3B P G P R
V4B B P G P
GPRP
PGPR
BPGP
V2B
V3B
V4B
RDab
PBPG
PBPG
R2ab
R1a
VDDa
ÌÌÌÌÌÌÌÌÌÌÌÌÌÌVOUTa
ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑGND
ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑOGa
16 Buffer
16 Dark
1 Dummy (Last VCCD Phase = V1 H1S)
1 11 24 186
1024
HLOD
1024
186 24 11 1
RDab
R2ab
R1b
VDDb
VOUTb
GND
OGb
H2SLa
H2SLb
Figure 4. TRUESENSE Sparse Color Filter Pattern
www.onsemi.com
4

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KAI-04070-FBA 전자부품, 판매, 대치품
KAI−04070
IMAGING PERFORMANCE
Table 5. TYPICAL OPERATIONAL CONDITIONS
(Unless otherwise noted, the Imaging Performance Specifications are measured using the following conditions.)
Description
Condition
Light Source
Continuous Red, Green and Blue LED Illumination
Operation
Nominal Operating Voltages and Timing
1. For monochrome sensor, only green LED used.
Notes
1
Specifications
Table 6. PERFORMANCE SPECIFICATIONS
Description
ALL CONFIGURATIONS
Dark Field Global Non-Uniformity
Bright Field Global Non-Uniformity
(Note 1)
Bright Field Global Peak to Peak
Non-Uniformity (Note 1)
Bright Field Center Non-Uniformity
(Note 1)
Maximum Photoresponse Non-Linearity
High Gain (4,000 to 20,000 electrons)
High Gain (4,000 to 40,000 electrons)
Low Gain (8,000 to 80,000 electrons)
Maximum Gain Difference between
Outputs (Note 2)
Horizontal CCD Charge Capacity
Vertical CCD Charge Capacity
Photodiode Charge Capacity (Note 3)
Floating Diffusion Capacity − High Gain
Floating Diffusion Capacity − Low Gain
Horizontal CCD Charge Transfer
Efficiency
Vertical CCD Charge Transfer
Efficiency
Photodiode Dark Current
Vertical CCD Dark Current
Image Lag
Anti-Blooming Factor
Vertical Smear
Read Noise (Note 4)
High Gain
Low Gain
Dynamic Range, Standard (Notes 4, 5)
Dynamic Range, Extended Linear
Dynamic Range Mode (XLDR)
(Notes 4, 5)
Output Amplifier DC Offset
Output Amplifier Bandwidth (Note 6)
Output Amplifier Impedance
Output Amplifier Sensitivity
High Gain
Low Gain
Symbol
DSNU
PRNU
NL_HG1
NL_HG2
NL_LG1
DG
HNe
VNe
PNe
FNe_HG
FNe_LG
HCTE
VCTE
IPD
IVD
Lag
XAB
Smr
ne−T
DR
XLDR
VODC
f−3db
ROUT
DV/DN
Min.
40
160
0.999995
0.999995
1,000
Nom.
2.0
5.0
1.0
2
3
6
90
60
44
0.999999
0.999999
7
140
−115
12
45
70.5
82.5
9.0
250
127
33
8.7
Max.
2.0
5.0
15.0
2.0
10
70
400
10
Temperature
Sampling
Tested at
Unit Plan
(5C)
mVpp
% rms
% pp
% rms
%
Die
Die
Die
Die
Design
27, 40
27, 40
27, 40
27, 40
%
ke
ke
ke
ke
ke
e/p/s
e/p/s
e
dB
erms
Design
Design
Design
Die
Die
Die
Die
Die
Die
Die
Design
Design
Design
Design
dB Design
dB Design
V
MHz
W
mV/e
Die
Die
Die
Design
27, 40
27, 40
27, 40
40
40
27, 40
27, 40
www.onsemi.com
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CCD IMAGE SENSOR

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