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부품번호 | 1SS302A 기능 |
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기능 | Silicon Epitaxial Planar Diode | ||
제조업체 | Toshiba | ||
로고 | |||
전체 6 페이지수
Switching Diodes Silicon Epitaxial Planar
1SS302A
1. Applications
• Ultra-High-Speed Switching
2. Features
(1) Fast reverse recovery time : trr = 1.6 ns (typ.)
(2) AEC-Q101 qualified
3. Packaging and Internal Circuit
1SS302A
1: Anode 1
2: Cathode 2
3: Cathode1 / Anode 2
USM
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage
VRM
85 V
Reverse voltage
VR
80
Peak forward current
IFM (Note 1)
300 mA
Average rectified current
IO (Note 1)
100
Power dissipation
PD (Note 2)
100 mW
Non-repetitive peak forward surge current
IFSM (Note 1), (Note 3)
2
A
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Unit rating. Total rating = Unit rating × 70%
Note 2: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Note 3: Measured with a 10 ms pulse.
Start of commercial production
2014-12
1 2015-01-08
Rev.2.0
8. Characteristics Curves (Note)
1SS302A
Fig. 8.1 IF - VF
Fig. 8.2 IR - VR
Fig. 8.3 Ct - VR
Fig. 8.4 PD - Ta
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
4 2015-01-08
Rev.2.0
4페이지 | |||
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다운로드 | [ 1SS302A.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
1SS302 | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) | Toshiba Semiconductor |
1SS302 | ULTRA HIGH SPEED SWITCHING APPLICATIONS | Guangdong Kexin Industrial |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |