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부품번호 | 1SS385FV 기능 |
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기능 | Silicon Epitaxial Schottky Barrier Type Diode | ||
제조업체 | Toshiba | ||
로고 | |||
전체 3 페이지수
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385FV
1SS385FV
High-Speed Switching Applications
z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA
z Ultra-small package
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
1.2±0.05
0.8±0.05
1
23
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
15 V
Reverse voltage
VR 10 V
Maximum (peak) forward current
IFM
200 *
mA
Average forward current
Surge current (10 ms)
Power dissipation
Junction temperature
IO
IFSM
P
Tj
100 *
1*
150**
125
mA
A
mW
°C
VESM
1. ANODE 1
2. ANODE 2
3. CATHODE
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr −40 to 100 °C JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high JEITA
―
temperature/current/voltage and the significant change in
TOSHIBA
1-1Q1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
** : Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
― IF = 1 mA
― IF = 5 mA
― IF = 100 mA
― VR = 10 V
― VR = 0, f = 1 MHz
Min Typ. Max Unit
― 0.18 ―
V
― 0.23 0.30 V
― 0.35 0.50 V
― ― 20 μA
― 20 ― pF
Equivalent Circuit (Top View)
Marking
Start of commercial production
2005-02
1 2014-03-01
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구 성 | 총 3 페이지수 | ||
다운로드 | [ 1SS385FV.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
1SS385F | DIODE (HIGH SPEED SWITCHING) | Toshiba Semiconductor |
1SS385FV | Silicon Epitaxial Schottky Barrier Type Diode | Toshiba |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |