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NPT2021 데이터시트 PDF




MA-COM에서 제조한 전자 부품 NPT2021은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 NPT2021 기능
기능 GaN Wideband Transistor
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NPT2021 데이터시트, 핀배열, 회로
NPT2021
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Features
GaN on Si HEMT D-Mode Transistor
Suitable for linear and saturated applications
Tunable from DC - 2.5 GHz
48 V Operation
16.5 dB Gain at 2.5 GHz
55 % Drain Efficiency at 2.5 GHz
100 % RF Tested
TO-272 Package
RoHS* Compliant and 260°C reflow compatible
Description
The NPT2021 GaN HEMT is a wideband transistor
optimized for DC - 2.5 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 45 W in an industry standard
plastic package with bolt down flange.
The NPT2021 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Functional Schematic
2
1
3
Rev. V1
Ordering Information
Part Number
NPT2021
NPT2021-SMBPPR
Package
Bulk Quantity
Sample Board
Pin Configuration
Pin No.
Pin Name
1 RFIN / VG
2 RFOUT / VD
3 Pad1
Function
RF Input / Gate
RF Output / Drain
Ground / Source
1. The exposed pad centered on the package bottom must be
connected to RF and DC ground. This path must also
provide a low thermal resistance heat path.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support




NPT2021 pdf, 반도체, 판매, 대치품
NPT2021
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
Load-Pull Performance: VDS = 48 V, IDQ = 350 mA, TC = 25°C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Frequency
(MHz)
900
ZS
()
1.1 + j0.7
ZL
()
7.3 + j5.5
PSAT
(W)
74
GSS
(dB)
24
Drain Efficiency
@ PSAT (%)
68
2000
1.4 - j6.1
2.9 + j2.4
65
17
68
2500
1.5 - j7.6
2.3 + j0.6
64
14
65
Impedance Reference
ZS and ZL vs. Frequency
ZS ZL
Gain vs. Output Power
24
Drain Efficiency vs. Output Power
70
22
20 900 MHz
2000 MHz
2500 MHz
18
16
14
60 900 MHz
2000 MHz
50 2500 MHz
40
30
20
10
12
25 30 35 40 45 50
4 Output Power (dBm)
0
25 30 35 40 45
Output Power (dBm)
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
50
For further information and support please visit:
https://www.macom.com/support

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NPT2021 전자부품, 판매, 대치품
NPT2021
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Typical Performance as measured in the 2.5 GHz evaluation board:
CW, VDS = 48 V, IDQ = 350 mA (unless noted)
Rev. V1
Gain vs. Output Power over Temperature
16
+25°C
-40°C
15 +85°C
14
Drain Efficiency vs. Output Power over Temperature
70
+25°C
60 -40°C
+85°C
50
40
13 30
20
12
10
11
25 30 35 40 45 50
Output Power (dBm)
0
25 30 35 40 45 50
Output Power (dBm)
Quiescent VGS vs. Temperature
-1.1
175 mA
350 mA
-1.2 525 mA
-1.3
-1.4
-1.5
-1.6
-50
-25
0 25 50
Temperature (°C)
75 100
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support

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