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PDF IXBF12N300 Data sheet ( Hoja de datos )
| Número de pieza | IXBF12N300 | |
| Descripción | Monolithic Bipolar MOS Transistor | |
| Fabricantes | IXYS | |
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High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
(Electrically Isolated Tab)
IXBF12N300
VCES =
IC110 =
VCE(sat) ≤
3000V
11A
3.2V
Symbol Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 20Ω
Clamped Inductive Load
PC
TJ
TJM
Tstg
TL
TSOLD
FC
VISOL
Weight
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Force
50/60Hz, 1 Minute
Maximum Ratings
3000
3000
V
V
± 20
± 30
V
V
26 A
11 A
98 A
ICM = 98
1500
A
V
125 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
20..120 / 4.5..27
4000
Nm/lb.in.
V~
5g
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ. Max.
BVCES
IC = 250μA, VGE = 0V
3000
V
VGE(th)
IC = 250μA, VCE = VGE
3.0 5.0 V
ICES
VCE
=
0.8
•
VCES,
VGE
=
0V
Note
2,
TJ
=
125°C
25 μA
1 mA
IGES VCE = 0V, VGE = ± 20V
±100 nA
VCE(sat)
IC = IC90, VGE = 15V, Note 1
2.8 3.2 V
TJ = 125°C
3.5
V
ISOPLUS i4-PakTM
12
5
Isolated Tab
1 = Gate
2 = Emitter
5 = Collector
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z Isolated Mounting Surface
z 4000V~ Electrical Isolation
z High Blocking Voltage
z High Peak Current Capability
z Low Saturation Voltage
Advantages
z Low Gate Drive Requirement
z High Power Density
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z Capacitor Discharge Circuits
z Uninterrupted Power Supplies(UPS)
z Laser Drivers
z AC Switches
© 2012 IXYS CORPORATION, All Rights Reserved
DS100121B(06/12)
1 page  
IXBF12N300
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
600
RG = 10Ω , VGE = 15V
500 VCE = 1250V
400
I C = 24A
300
I C = 12A
200
100
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
750 150
700 t r
td(on) - - - -
650 TJ = 125ºC, VGE = 15V
VCE = 1250V
600
140
130
120
550 110
500 I C = 24A, 12A
450
100
90
400 80
350 70
300 60
250 50
10 20 30 40 50 60 70 80 90 100
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times vs.
Collector Current
1400
1200
1000
t f td(off) - - - -
RG = 10Ω, VGE = 15V
VCE = 1250V
340
300
260
800 220
600 180
400 140
TJ = 125ºC, 25ºC
200 100
0 60
6 8 10 12 14 16 18 20 22 24
IC - Amperes
Fig. 14. Resistive Turn-on Rise Time vs.
Collector Current
600
RG = 10Ω , VGE = 15V
500 VCE = 1250V
400
TJ = 125ºC
300
200
100 TJ = 25ºC
0
6 8 10 12 14 16 18 20 22 24
IC - Amperes
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
800 200
t f td(off) - - - -
700 RG = 10Ω, VGE = 15V
VCE = 1250V
190
600 180
500
I C = 12A
170
400 160
300
I C = 24A
150
200 140
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
700 900
650 t f
td(off) - - - -
TJ = 125ºC, VGE = 15V
600 VCE = 1250V
550
800
700
600
500 I C = 12A
500
450 400
400
I C = 24A
350
300
200
300 100
250 0
10 20 30 40 50 60 70 80 90 100
RG - Ohms
© 2012 IXYS CORPORATION, All Rights Reserved
IXYS REF: B_12N300(4P)6-07-12-B
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXBF12N300.PDF ] | |
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