Datasheet SSPL6040 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	SSPL6040	N-Channel MOSFET Main Product Characteristics VDSS 60V RDS(on) 34mΩ (typ.) ID 38A Features and Benefits TO-220  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body reco	GOOD-ARK	mosfet
2	SSPL6040	N-Channel enhancement mode power field effect transistors Main Product Characteristics: VDSS RDS(on) 60V 34mΩ (typ.) ID 38A TO-220 Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body re	Silikron Semiconductor	transistor
3	SSPL6040D	N-Channel enhancement mode power field effect transistors Main Product Characteristics: VDSS RDS(on) 60V 34mΩ (typ.) ID 33A Features and Benefits: TO-252 (D-PAK)  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse	Silikron Semiconductor	transistor

SSP Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	SSP-T	Surface Mount Quartz Crystal Units SSP-T Series (SSP-T5) Surface Mount Quartz Crystal Units for Low Frequencies FEATURES New Product • This type with height 2.1mm Max. • Small mounting area of 23.4mm2. • SMD type suitable for automatic & high density surface mounting. • Plastic mold package containing h	ETC	data
2	SSP-T5	Surface Mount Quartz Crystal Units SSP-T Series (SSP-T5) Surface Mount Quartz Crystal Units for Low Frequencies FEATURES New Product • This type with height 2.1mm Max. • Small mounting area of 23.4mm2. • SMD type suitable for automatic & high density surface mounting. • Plastic mold package containing h	ETC	data
3	SSP100	(SSP80 / SSP100) Surround Sound Processor Manual Owner’s Manual SSP100 Surround Sound Processor SSP80 Surround Sound Processor www.halcro.com Free Datasheet http://www.datasheet4u.net/ 1 Contents Introduction ................................................3 Important Safety Information...................5 Symbols .........................	HALCRO	data
4	SSP10N60A	Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSP10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 9 A TO-2	Fairchild Semiconductor	mosfet
5	SSP10N60B	600V N-Channel MOSFET SSP10N60B/SSS10N60B SSP10N60B/SSS10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to mini	Fairchild Semiconductor	mosfet
6	SSP11N60C2	Power Transistor Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 Product Summary VDS	infineon	transistor
7	SSP1601	DSP	Samsung Electronics	data

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Número de pieza	Descripción	Fabricantes	PDF
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