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PDF SSPL50N30H Data sheet ( Hoja de datos )

Número de pieza SSPL50N30H
Descripción N-Channel enhancement mode power field effect transistors
Fabricantes Silikron Semiconductor 
Logotipo Silikron Semiconductor Logotipo



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No Preview Available ! SSPL50N30H Hoja de datos, Descripción, Manual

Main Product Characteristics:
VDSS
RDS(on)
300V
45mΩ(typ.)
ID 50A
Features and Benefits:
TO-247
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150operating temperature
SSPL50N30H
Marking and Pin
Schematic Diagram
Assignment
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=60mH
Avalanche Current @ L=60mH
Operating Junction and Storage Temperature Range
Max.
50
31
192
390
3.12
300
± 30
4465
12.2
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2014.07.09
www.silikron.com
Version : 1.2
page 1 of 8

1 page




SSPL50N30H pdf
Typical electrical and thermal characteristics
SSPL50N30H
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6. Typical Capacitance Vs. Drain-to-Source
Voltage
©Silikron Semiconductor CO.,LTD.
2014.07.09
www.silikron.com
Version : 1.2
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