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PDF SSPL6005 Data sheet ( Hoja de datos )

Número de pieza SSPL6005
Descripción N-Channel enhancement mode power field effect transistors
Fabricantes Silikron Semiconductor 
Logotipo Silikron Semiconductor Logotipo



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No Preview Available ! SSPL6005 Hoja de datos, Descripción, Manual

Main Product Characteristics:
VDSS
60V
RDS(on) 4.9mohm(typ.)
ID 160A
Features and Benefits:
TO220
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175operating temperature
SSPL6005
Marking and pin
Assignment
Schematic diagram
Description:
These N-Channel enhancement mode power field effect transistors are produced using silikron
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
160
110
640
230
1.5
60
±20
960
80
-55 to +175
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2011.11.20
www.silikron.com
Version : 1.1
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SSPL6005 pdf
Typical electrical and thermal characteristics
SSPL6005
Figure 5. Maximum Drain Current Vs. Case
Temperature
Case Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2011.11.20
www.silikron.com
Version : 1.1
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