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PDF SSTS30100CT Data sheet ( Hoja de datos )
| Número de pieza | SSTS30100CT | |
| Descripción | Schottky Barrier Rectifier ( Diode ) | |
| Fabricantes | Silikron Semiconductor | |
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Main Product Characteristics:
IF 2×15A
VRRM
100V
Tj(max)
150℃
Vf(typ)
0.64V
TO220
Features and Benefits:
SSTS30100CT
High Junction Temperature
High ESD Protection
High Forward & Reverse Surge capability
SSTS30100CT/CTF
TO220F
SSTS30100CTF
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Characterizes
Value
Unit
VRRM Peak Repetitive Reverse Voltage
100 V
VR(RMS) RMS Reverse Voltage
70 V
IF(AV) Average Forward Current
Per diode
Per device
15 A
30 A
IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
200
A
IRRM Peak Repetitive Reverse Surge Current(Tp=2us)
TJ Maximum operation Junction Temperature Range
Tstg Storage Temperature Range
Thermal Resistance
0.5
-55~150
-55~150
A
℃
℃
Symbol
Characterizes
Value
Unit
RθJC
RθJC
Maximum Thermal Resistance Junction To
Case(per leg)
TO220
TO220F
2.3 ℃/W
5.3 ℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
Test Condition
VR Reverse Breakdown Voltage 100
V IR=0.5mA
0.5 V IF=5A, TJ=25℃
0.55
V IF=7.5A, TJ=25℃
0.61
V IF=10A, TJ=25℃
VF Forward Voltage Drop
0.7 0.8
0.45
V IF=15A, TJ=25℃
V IF=5A, TJ=125℃
0.52
V IF=7.5A, TJ=125℃
0.57
V IF=10A, TJ=125℃
0.64 0.7 V IF=15A, TJ=125℃
IR Leakage Current
0.1
20
mA
VR=100V, TJ=25℃
VR=100V, TJ=125℃
©Silikron Semiconductor CO., LTD.
2013.4.23
www.silikron.com
Version: 2.3
page 1of6
1 page  
Ordering and Marking Information
SSTS30100CT/CTF
Device Marking: SSTS30100CT&SSTS30100CTF
Package (Available)
TO-220&TO220F
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
TO220
TO220F
Units/
Tube
50
50
Tubes/Inner
Box
20
20
Units/Inner
Box
1000
1000
Inner Boxes /
Carton Box
6
6
Units/
Carton Box
6000
6000
Reliability Test Program
Test Item
High
Temperature
Reverse
Bias(HTRB)
Conditions
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
©Silikron Semiconductor CO., LTD.
2013.4.23
www.silikron.com
Version: 2.3
page 5of6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSTS30100CT.PDF ] | |
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