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PDF SSTS20100RF Data sheet ( Hoja de datos )

Número de pieza SSTS20100RF
Descripción Schottky Barrier Rectifier ( Diode )
Fabricantes Silikron Semiconductor 
Logotipo Silikron Semiconductor Logotipo



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SSTS20100R/RF
Main Product Characteristics:
IF
VRRM
Tj(max)
Vf(max)
20A
100V
150
0.8V
Features and Benefits:
„ High Junction Temperature
„ High ESD Protection
„ High Forward & Reverse Surge capability
TO126
SSTS20100R
TO126F
SSTS20100RF
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Characterizes
VRRM
VR(RMS)
IF(AV)
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
Average Forward Current
IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
IRRM Peak Repetitive Reverse Surge Current(Tp=2us)
TJ Maximum operation Junction Temperature Range
Tstg Storage Temperature Range
Value
100
70
20
150
0.5
-55~150
-55~150
Unit
V
V
A
A
A
Thermal Resistance
Symbol
Characterizes
RθJC Maximum Thermal Resistance Junction To
RθJC Case(per leg)
TO126
TO126F
Value
5
13
Unit
/W
/W
Electrical Characterizes @TA=25unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
VR
Reverse Breakdown Voltage
100
VF Forward Voltage Drop
V
0.8
0.75
V
IR Leakage Current
0.1
20
mA
Test Condition
IR=0.5mA
IF=20A, TJ=25
IF=20A, TJ=125
VR=100V, TJ=25
VR=100V, TJ=125
©Silikron Semiconductor CO., LTD.
 
2011.8.19
www.silikron.com 
Version: 1.0
page 1of6

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SSTS20100RF pdf
                                                                                 
 
SSTS20100R/RF
Ordering and Marking Information
Device Marking: SSTS200100R&SSTS20100RF
Package (Available)
TO-126&TO126F
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Packag Units/ Tubes/Inne
e Type Tube r
Box
TO126 50
20
TO126F 50
20
Units/Inne
r
Box
1000
1000
Inner
Boxes/Carton
Box
6
6
Units/Carto
n
Box
6000
6000
Reliability Test Program
Test Item Conditions
High
Tj=125to 175@
Temperature 80% of Max
Reverse
VDSS/VCES/VR
Bias(HTRB)
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
©Silikron Semiconductor CO., LTD.
 
2011.8.19
www.silikron.com 
Version: 1.0
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