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PDF SSTS20120 Data sheet ( Hoja de datos )
| Número de pieza | SSTS20120 | |
| Descripción | Schottky Barrier Rectifier ( Diode ) | |
| Fabricantes | Silikron Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSTS20120 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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SSTS20120/SSTS20120F
Main Product Characteristics:
IF
VRRM
Tj(max)
Vf(max)
20A
120V
150℃
0.9V
Features and Benefits:
High Junction Temperature
High ESD Protection
High Forward & Reverse Surge capability
TO220
SSTS20120
TO220F
SSTS20120F
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Characterizes
VRRM
VR(RMS)
IF(AV)
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
Average Forward Current
IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
IRRM Peak Repetitive Reverse Surge Current(Tp=2us)
TJ Maximum operation Junction Temperature Range
Tstg Storage Temperature Range
Value
120
84
20
200
2
-55~150
-55~150
Unit
V
V
A
A
A
℃
℃
Thermal Resistance
Symbol
Characterizes
RθJC
RθJC
Maximum Thermal Resistance Junction To
Case(per leg)
TO220
TO220F
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
VR
Reverse Breakdown Voltage
120
V
0.7
VF Forward Voltage Drop
0.9 V
0.8
IR Leakage Current
0.2
20
mA
Value
2
4
Unit
℃/W
℃/W
Test Condition
IR=0.5mA
IF=10A, TJ=25℃
IF=20A, TJ=25℃
IF=20A, TJ=125℃
VR=120V, TJ=25℃
VR=120V, TJ=125℃
©Silikron Semiconductor CO., LTD.
2012.2.17
www.silikron.com
Version: 1.0
page 1of6
1 page  
SSTS20120/SSTS20120F
Ordering and Marking Information
Device Marking: SSTS20120&SSTS20120F
Package (Available)
TO-220&TO220F
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Packag Units/ Tubes/Inne
e Type Tube r
Box
TO220 50
20
TO220F 50
20
Units/Inne
r
Box
1000
1000
Inner
Boxes/Carton
Box
6
6
Units/Carto
n
Box
6000
6000
Reliability Test Program
Test Item Conditions
High
Tj=125℃ to 175℃ @
Temperature 80% of Max
Reverse
VDSS/VCES/VR
Bias(HTRB)
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
©Silikron Semiconductor CO., LTD.
2012.2.17
www.silikron.com
Version: 1.0
page 5of6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSTS20120.PDF ] | |
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