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PDF SSF3314E Data sheet ( Hoja de datos )
| Número de pieza | SSF3314E | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | GOOD-ARK | |
| Logotipo |  |
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DESCRIPTION
The SSF3314E uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional
or bi-directional load switch, facilitated by its
common-drain configuration.
GENERAL FEATURES
● VDS = 30V,ID = 8A
RDS(ON) < 39mΩ @ VGS=2.5V
RDS(ON) < 28mΩ @ VGS=3.1V
RDS(ON) < 24mΩ @ VGS=4.0V
RDS(ON) < 23mΩ @ VGS=4.5V
RDS(ON) < 18mΩ @ VGS=10V
ESD Rating：2000V HBM
● High Power and current handing capability
● Lead free product
● Surface Mount Package
SSF3314E
30V N-Channel MOSFET
Schematic Diagram
Pin Assignment
DFN3×3-8L Bottom View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3314E
SSF3314E
DFN3×3-8L
-
Tape Width
-
Quantity
-
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±12
8
45
1.7
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
40 ℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=30V,VGS=0V
Min Typ Max Unit
30 V
1 μA
www.goodark.com
Page 1 of 4
Rev.1.0
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SSF3314E.PDF ] | |
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