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PDF AP22N13GH-HF Data sheet ( Hoja de datos )
| Número de pieza | AP22N13GH-HF | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP22N13GH-HF (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Advanced Power
Electronics Corp.
AP22N13GH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant Product
G
D BVDSS
RDS(ON)
ID
S
135V
75mΩ
22.4A
Description
AP22N13 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial surface
mount applications using infrared reflow technique and suited for high
current application due to the low connection resistance.
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Rating
135
+20
22.4
14.1
60
89.2
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Value
1.4
62.5
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
201304151
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP22N13GH-HF.PDF ] | |
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