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PDF AP28G40GEM-HF Data sheet ( Hoja de datos )
| Número de pieza | AP28G40GEM-HF | |
| Descripción | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP28G40GEM-HF
Halogen-Free Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
▼ High Input Impedance
▼ High Peak Current Capability
▼ Low Gate Drive
▼ Strobe Flash Applications
▼ RoHS Compliant & Halogen-Free
C
C
C
C
SO-8
VCE
ICP
G
E
EE
G
400V
150A
C
E
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VCE
VGEP
ICP
PD@TA=25℃1
TSTG
TJ
Collector-Emitter Voltage
Peak Gate-Emitter Voltage
Pulsed Collector Current, VGE @ 3V
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
.
400
+6
150
1
-55 to 150
150
V
V
A
W
oC
oC
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
IGES
ICES
VCE(sat)
VGE(th)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RthJA1
Gate-Emitter Leakage Current VGE=+6V, VCE=0V
Collector-Emitter Leakage Current VCE=400V, VGE=0V
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
VGE=3V, ICP=150A (Pulsed)
VCE=VGE, IC=250uA
IC=40A
VCE=200V
VGE=4V
VCC=320V
IC=160A
RG=10Ω
VGE=4V
VGE=0V
VCE=30V
Reverse Transfer Capacitance f=1.0MHz
Thermal Resistance Junction-Ambient
- - +30 uA
- - 25 uA
- 3.6 9
V
0.3 - 1.2 V
- 86 138 nC
- 2 - nC
- 23 - nC
- 220 -
ns
- 800 -
ns
- 1.6 - µs
- 1.5 - µs
- 5100 8160 pF
- 38 - pF
- 27 - pF
- - 125 oC/W
Notes:
1.Surface mounted on Min. copper pad of FR4 board.
Data and specifications subject to change without notice
1
201502252
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP28G40GEM-HF.PDF ] | |
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