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PDF SSF6008 Data sheet ( Hoja de datos )
| Número de pieza | SSF6008 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | GOOD-ARK | |
| Logotipo |  |
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SSF6008
60V N-Channel MOSFET
FEATURES
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
Lead free product
ID =84A
BV=60V
R DS (ON)=8mΩ
DESCRIPTION
The SSF6008 is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6008 is assembled
in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C Continuous drain current,VGS@10V
ID@Tc=100Cْ
IDM
Continuous drain current,VGS@10V
Pulsed drain current ①
PD@TC=25ْC
Power dissipation
Linear derating factor
VGS Gate-to-Source voltage
EAS Single pulse avalanche energy ②
EAR Repetitive avalanche energy ①
dv/dt
Peak diode recovery voltage
TJ
TSTG
Operating Junction and
Storage Temperature Range
SSF6008 Top View (T0-220)
Max.
84
76
310
181
1.5
±20
400
20
30
–55 to +175
Units
A
W
W/ْ C
V
mJ
mJ
v/ns
ْC
Thermal Resistance
Parameter
RθJC
Junction-to-case
RθJA Junction-to-ambient
Min. Typ. Max.
— 0.83 —
— — 62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS Drain-to-Source breakdown voltage 60 —
—V
RDS(on) Static Drain-to-Source on-resistance — 5.5
8 mΩ
VGS(th)
Gate threshold voltage
2.0 — 4.0 V
——
2
IDSS Drain-to-Source leakage current
——
μA
10
IGSS Gate-to-Source forward leakage — — 100 nA
www.goodark.com
Page 1 of 6
Test Conditions
VGS=0V,ID=250μA
VGS=10V,ID=30A
VDS=VGS,ID=250μA
VDS=60V,VGS=0V
VDS=60V,
VGS=0V,TJ=150ْC
VGS=20V
Rev.2.2
1 page  
SSF6008
60V N-Channel MOSFET
Safe Operation Area
Max Drain Current vs. Junction
Transient Thermal Impedance Curve
www.goodark.com
Page 5 of 6
Rev.2.2
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSF6008.PDF ] | |
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