Datasheet.kr   

MMFT3055ET1 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 MMFT3055ET1은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 MMFT3055ET1 자료 제공

부품번호 MMFT3055ET1 기능
기능 Power MOSFET ( Transistor )
제조업체 ON Semiconductor
로고 ON Semiconductor 로고


MMFT3055ET1 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 7 페이지수

미리보기를 사용할 수 없습니다

MMFT3055ET1 데이터시트, 핀배열, 회로
MMFT3055E
Power MOSFET
1.7 Amp, 60 Volts
NChannel TMOS EFETt SOT223
This advanced EFET is a TMOS Medium Power MOSFET
designed to withstand high energy in the avalanche and commutation
modes. This new energy efficient device also offers a draintosource
diode with a fast recovery time. Designed for low voltage, high speed
switching applications in power supplies, dcdc converters and PWM
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients. The device is housed in the SOT223 package which is
designed for medium power surface mount applications.
Features
Silicon Gate for Fast Switching Speeds
Low RDS(on) — 0.15 Ω max
The SOT223 Package can be Soldered Using Wave or Reflow. The
Formed Leads Absorb Thermal Stress During Soldering, Eliminating
the Possibility of Damage to the Die
Available in 12 mm Tape and Reel
Use MMFT3055ET1 to order the 7 inch/1000 unit reel.
Use MMFT3055ET3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DraintoSource Voltage
GatetoSource VoltageContinuous
Drain Current Continuous
Drain Current Single Pulse (tp 10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C (Note 1)
VDSS
VGS
ID
IDM
PD
60
± 20
1.7
6.8
0.8
6.3
Vdc
Vdc
Adc
Apk
Watts
mW/°C
Operating and Storage Temperature
Range
TJ, Tstg
65 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 60 Vdc, VGS = 10 Vdc, Peak
IL = 1.7 Apk, L = 0.2 mH, RG = 25 Ω )
Thermal Resistance
Junction to Ambient (surface mounted)
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10
seconds
EAS
RθJA
TL
mJ
168
°C/W
156
260 °C
1. Power rating when mounted on FR4 glass epoxy printed circuit board
using recommended footprint.
http://onsemi.com
VDSS
60 V
RDS(ON) TYP
150 mΩ
NChannel
2,4
D
ID MAX
1.7 A
1
G
4
12
3
SOT223
CASE 318E
STYLE 3
S
3
MARKING
DIAGRAM
3055
LWW
L = Location Code
WW = Work Week
PIN ASSIGNMENT
4 Drain
123
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MMFT3055ET1 SOT223 1000 Tape & Reel
MMFT3055ET3 SOT223 4000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 5
1
Publication Order Number:
MMFT3055E/D




MMFT3055ET1 pdf, 반도체, 판매, 대치품
MMFT3055E
FORWARD BIASED SAFE OPERATING AREA
The FBSOA curves define the maximum draintosource
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned
on. Because these curves include the limitations of
simultaneous high voltage and high current, up to the rating
of the device, they are especially useful to designers of linear
systems. The curves are based on an ambient temperature of
25°C and a maximum junction temperature of 150°C.
Limitations for repetitive pulses at various ambient
temperatures can be determined by using the thermal
response curves. Application Note, AN569, “Transient
Thermal ResistanceGeneral Data and Its Use” provides
detailed instructions.
SWITCHING SAFE OPERATING AREA
The switching safe operating area (SOA) is the boundary
that the load line may traverse without incurring damage to
the MOSFET. The fundamental limits are the peak current,
IDM and the breakdown voltage, BVDSS. The switching
SOA is applicable for both turnon and turnoff of the
devices for switching times less than one microsecond.
10
VGS = 20 V
SINGLE PULSE
TA = 25°C
1
20 ms
100 ms
0.1
0.01
0.1
DC
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
1s
500 ms
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Maximum Rated Forward Biased
Safe Operating Area
1.0
0.1
0.01
0.001
1.0E−05
D = 0.5
0.2
0.1
0.05
0.02
0.01
1.0E−04
SINGLE PULSE
P(pk)
t1
t2
RθJA(t) = r(t) RθJA
RθJA = 156°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) RθJA(t)
DUTY CYCLE, D = t1/t2
1.0E−03
1.0E−02
t, TIME (s)
1.0E−01
Figure 8. Thermal Response
1.0E+00
1.0E+01
COMMUTATING SAFE OPERATING AREA (CSOA)
The Commutating Safe Operating Area (CSOA) of Figure
10 defines the limits of safe operation for commutated
sourcedrain current versus reapplied drain voltage when
the sourcedrain diode has undergone forward bias. The
curve shows the limitations of IFM and peak VDS for a given
rate of change of source current. It is applicable when
waveforms similar to those of Figure 9 are present. Full or
halfbridge PWM DC motor controllers are common
applications requiring CSOA data.
Device stresses increase with increasing rate of change of
source current so dIS/dt is specified with a maximum value.
Higher values of dIS/dt require an appropriate derating of
IFM, peak VDS or both. Ultimately dIS/dt is limited primarily
by device, package, and circuit impedances. Maximum
device stress occurs during trr as the diode goes from
conduction to reverse blocking.
VDS(pk) is the peak draintosource voltage that the
device must sustain during commutation; IFM is the
maximum forward sourcedrain diode current just prior to
the onset of commutation.
VR is specified at 80% rated BVDSS to ensure that the
CSOA stress is maximized as IS decays from IRM to zero.
RGS should be minimized during commutation. TJ has
only a second order effect on CSOA.
Stray inductances in ON Semiconductor’s test circuit are
assumed to be practical minimums. dVDS/dt in excess of
10 V/ns was attained with dIS/dt of 400 A/ms.
http://onsemi.com
4

4페이지










MMFT3055ET1 전자부품, 판매, 대치품
MMFT3055E
PACKAGE DIMENSIONS
SOT223 (TO261)
CASE 318E04
ISSUE K
A
F
4
S
1 23
B
LG
0.08 (0003)
H
D
J
C
M
K
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.249 0.263
B 0.130 0.145
C 0.060 0.068
D 0.024 0.035
F 0.115 0.126
G 0.087 0.094
H 0.0008 0.0040
J 0.009 0.014
K 0.060 0.078
L 0.033 0.041
M 0_ 10 _
S 0.264 0.287
MILLIMETERS
MIN MAX
6.30 6.70
3.30 3.70
1.50 1.75
0.60 0.89
2.90 3.20
2.20 2.40
0.020 0.100
0.24 0.35
1.50 2.00
0.85 1.05
0 _ 10 _
6.70 7.30
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
ǒ ǓSCALE 6:1
mm
inches
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
EFET is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
291 Kamimeguro, Meguroku, Tokyo, Japan 1530051
Phone: 81357733850
http://onsemi.com
7
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MMFT3055E/D

7페이지


구       성 총 7 페이지수
다운로드[ MMFT3055ET1.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
MMFT3055ET1

Power MOSFET ( Transistor )

ON Semiconductor
ON Semiconductor
MMFT3055ET3

Power MOSFET ( Transistor )

ON Semiconductor
ON Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵