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PDF MMFT3055ET3 Data sheet ( Hoja de datos )
| Número de pieza | MMFT3055ET3 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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MMFT3055E
Power MOSFET
1.7 Amp, 60 Volts
N−Channel TMOS E−FETt SOT−223
This advanced E−FET is a TMOS Medium Power MOSFET
designed to withstand high energy in the avalanche and commutation
modes. This new energy efficient device also offers a drain−to−source
diode with a fast recovery time. Designed for low voltage, high speed
switching applications in power supplies, dc−dc converters and PWM
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients. The device is housed in the SOT−223 package which is
designed for medium power surface mount applications.
Features
• Silicon Gate for Fast Switching Speeds
• Low RDS(on) — 0.15 Ω max
• The SOT−223 Package can be Soldered Using Wave or Reflow. The
Formed Leads Absorb Thermal Stress During Soldering, Eliminating
the Possibility of Damage to the Die
• Available in 12 mm Tape and Reel
Use MMFT3055ET1 to order the 7 inch/1000 unit reel.
Use MMFT3055ET3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage− Continuous
Drain Current − Continuous
Drain Current − Single Pulse (tp ≤ 10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C (Note 1)
VDSS
VGS
ID
IDM
PD
60
± 20
1.7
6.8
0.8
6.3
Vdc
Vdc
Adc
Apk
Watts
mW/°C
Operating and Storage Temperature
Range
TJ, Tstg
−65 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 60 Vdc, VGS = 10 Vdc, Peak
IL = 1.7 Apk, L = 0.2 mH, RG = 25 Ω )
Thermal Resistance
− Junction to Ambient (surface mounted)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
EAS
RθJA
TL
mJ
168
°C/W
156
260 °C
1. Power rating when mounted on FR−4 glass epoxy printed circuit board
using recommended footprint.
http://onsemi.com
VDSS
60 V
RDS(ON) TYP
150 mΩ
N−Channel
2,4
D
ID MAX
1.7 A
1
G
4
12
3
SOT−223
CASE 318E
STYLE 3
S
3
MARKING
DIAGRAM
3055
LWW
L = Location Code
WW = Work Week
PIN ASSIGNMENT
4 Drain
123
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping†
MMFT3055ET1 SOT−223 1000 Tape & Reel
MMFT3055ET3 SOT−223 4000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 5
1
Publication Order Number:
MMFT3055E/D
1 page  
MMFT3055E
15 V
VGS
0
90%
IS
10%
IFM dlS/dt
trr
ton IRM
tfrr
VDS(pk)
VR
0.25 IRM
VDS Vf VdsL
MAX. CSOA
STRESS AREA
Figure 9. Commutating Waveforms
10
9
8 dIS/dt ≤ 400 A/μs
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80 90 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 10. Commutating Safe Operating
Area (CSOA)
RGS
DUT
−
VR
+
VGS
IFM
+
20 V
−
IS
VDS
Li
VR = 80% OF RATED VDSS
VdsL = Vf + Li ⋅ dlS/dt
Figure 11. Commutating Safe Operating Area
Test Circuit
BVDSS
VDS
t RG
L
IL
VDD
VDD
IL(t)
tP t, (TIME)
Figure 12. Unclamped Inductive Switching
Test Circuit
Figure 13. Unclamped Inductive Switching
Waveforms
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MMFT3055ET3.PDF ] | |
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