(PDF) ST3422A Datasheet - N Channel Enhancement Mode MOSFET

Número de pieza	ST3422A
Descripción	N Channel Enhancement Mode MOSFET
Fabricantes	Stanson Technology
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No Preview Available ! ST3422A N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching. PIN CONFIGURATION SOT-23-3L 3 D GS 12 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L 3 FEATURE 60V/6.0A, RDS(ON) = 28mΩ (Typ.) @VGS = 10V 60V/2.5A, RDS(ON) = 38mΩ @VGS = 4.5V 60V/1.5A, RDS(ON) = 100mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 22YA 12 Y: Year Code A: Week Code 1 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stnasontech.com STN3422A 2009. V1 1 page ST3422A N Channel Enhancement Mode MOSFET 6.0A TYPICAL CHARACTERICTICS (25℃ Unless noted) 5 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stnasontech.com STN3422A 2009. V1 5 Page

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PDF ST3422A Data sheet ( Hoja de datos )