(PDF) ST3426 Datasheet - N Channel Enhancement Mode MOSFET

Número de pieza	ST3426
Descripción	N Channel Enhancement Mode MOSFET
Fabricantes	Stanson Technology
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No Preview Available ! ST3426 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST3426 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching. PIN CONFIGURATION SOT-23 3 D G S 12 FEATURE l 60V/3.0A, RDS(ON) = 90mΩ @VGS = 10V l 60V/2.0A, RDS(ON) = 110mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 Y: Year Code A: Process Code 1 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stnasontech.com STN3426 2014. V1 1 page ST3426 N Channel Enhancement Mode MOSFET 3.0A TYPICAL CHARACTERICTICS (25℃ Unless noted) 5 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stnasontech.com STN3426 2014. V1 5 Page

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PDF ST3426 Data sheet ( Hoja de datos )