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PDF STC6614 Data sheet ( Hoja de datos )
| Número de pieza | STC6614 | |
| Descripción | N & P Pair Enhancement Mode MOSFET | |
| Fabricantes | Stanson Technology | |
| Logotipo |  |
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STC6614
N&P Pair Enhancement Mode MOSFET
7.0A / -5.0A
DESCRIPTION
The STC6614 is the N & P-Channel enhancement mode power field effect transistor using high cell density
DMOS trench technology. This high density process is especially tailored to minimize on-state resistance
and provide superior switching performance. This device is particularly suited for low voltage application
such as notebook computer power management and other battery powered circuits, where high-side
switching, low in-line power loss and resistance to transient are needed.
PIN CONFIGURATION
SOP-8
FEATURE
N-Channel
60V/7.0A, RDS(ON) = 35mΩ(Typ.)
@VGS = 10V
60V/4.0A, RDS(ON) = 40mΩ
@VGS = 4.5V
PART MARKING
P-Channel
-60V/-5.0A, RDS(ON) = 60mΩ(Typ.)
@VGS = -10V
-60V/-3.0A, RDS(ON)= 80mΩ
@VGS = -4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package
Y∶Year
A∶Product Code
Q︰Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6614 2010. V1
1 page  
TYPICAL CHARACTERICTICS (N MOS)
STC6614
N&P Pair Enhancement Mode MOSFET
7.0A / -5.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6614 2010. V1
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STC6614.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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