(PDF) STN8822 Datasheet - Dual N Channel Enhancement Mode MOSFET

Número de pieza	STN8822
Descripción	Dual N Channel Enhancement Mode MOSFET
Fabricantes	Stanson Technology
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No Preview Available ! STN8822 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN8822 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required. PIN CONFIGURATION TSSOP-8 FEATURE 20V/8.0A, RDS(ON) = 20m-ohm (Typ.) @VGS =4.5V 20V/7.0A, RDS(ON) =24m-ohm @VGS =2.5V 20V/3.0A, RDS(ON) =32m-ohm @VGS =1.8V Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC current capability TSSOP-8 package design STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8822 2009. V1 1 page TYPICAL CHARACTERICTICS STN8822 Dual N Channel Enhancement Mode MOSFET 8.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8822 2009. V1 5 Page

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PDF STN8822 Data sheet ( Hoja de datos )