(PDF) STN8822A Datasheet - Dual N Channel Enhancement Mode MOSFET

Número de pieza	STN8822A
Descripción	Dual N Channel Enhancement Mode MOSFET
Fabricantes	Stanson Technology
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No Preview Available ! STN8822A Dual N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN8822A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required. PIN CONFIGURATION TSOP-6 FEATURE 20V/6.0A, RDS(ON) = 25m-ohm @VGS =4.5V 20V/5.0A, RDS(ON) =42m-ohm @VGS =2.5V Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC current capability TSOP-6 package design F：Year Code A: Produces Code X：Wafer Code 2 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8822A 2009. V1 1 page TYPICAL CHARACTERICTICS STN8822A Dual N Channel Enhancement Mode MOSFET 6.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8822A 2009. V1 5 Page

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PDF STN8822A Data sheet ( Hoja de datos )