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Número de pieza | STP6621 | |
Descripción | P Channel Enhancement Mode MOSFET | |
Fabricantes | Stanson Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STP6621 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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STP6621
P Channel Enhancement Mode MOSFET
-18.0A
STP6621 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, noteook power management ane ther
battery powered circuits where high-side witching.
PIN CONFIGURATION
SOP-8
FEATURE
-60V/-10.0A, RDS(ON) = 23mΩ (Typ.)
@VGS =-10V
-60V/-8.0A, RDS(ON) = 28mΩ
@VGS = -4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
PART MARKING
SOP-8
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
.
STP6621 2010. V1
1 page TYPICAL CHARACTERICTICS
STP6621
P Channel Enhancement Mode MOSFET
-18.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
.
STP6621 2010. V1
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet STP6621.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP6621 | P Channel Enhancement Mode MOSFET | Stanson Technology |
STP6623 | P Channel Enhancement Mode MOSFET | Stanson Technology |
STP6625 | P Channel Enhancement Mode MOSFET | Stanson Technology |
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