(PDF) STN3446 Datasheet - N Channel Enhancement Mode MOSFET

Número de pieza	STN3446
Descripción	N Channel Enhancement Mode MOSFET
Fabricantes	Stanson Technology
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No Preview Available ! STN3446 N Channel Enhancement Mode MOSFET 5.3A DESCRIPTION The STN3446 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION TSOP-6P FEATURE ◆ 20V/5.3A, RDS(ON)=48mΩ@VGS=4.5V ◆ 20V/3.4A, RDS(ON)=65mΩ@VGS=2.5V ◆ 20V/2.8A, RDS(ON)=90mΩ@VGS=1.8V ◆ Super high density cell design for extremely low RDS(ON) ◆ Exceptional an-resistance and maximum DC current capability ◆ TSOP-6P package design Y: Year Code W: Week Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN3446 2010. V1 1 page TYPICAL CHARACTERICTICS STN3446 N Channel Enhancement Mode MOSFET 5.3A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN3446 2010. V1 5 Page

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PDF STN3446 Data sheet ( Hoja de datos )