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What is PESD3V3L5UK?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "Low capacitance unidirectional fivefold ESD protection diode arrays".


PESD3V3L5UK Datasheet PDF - NXP Semiconductors

Part Number PESD3V3L5UK
Description Low capacitance unidirectional fivefold ESD protection diode arrays
Manufacturers NXP Semiconductors 
Logo NXP Semiconductors Logo 


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PESD3V3L5UK; PESD5V0L5UK
Low capacitance unidirectional fivefold ESD protection diode
arrays
Rev. 1 — 25 August 2010
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode
arrays in a leadless ultra small SOT891 Surface-Mounted Device (SMD) plastic package
designed to protect up to five unidirectional signal lines from the damage caused by ESD
and other transients.
1.2 Features and benefits
„ ESD protection of up to five lines
„ Low diode capacitance
„ Max. peak pulse power: PPP = 30 W
„ Low clamping voltage: VCL = 9.5 V
„ AEC-Q101 qualified
„ Very low leakage current: IRM = 0.5 μA
„ ESD protection up to 20 kV
„ IEC 61000-4-2; level 4 (ESD)
„ IEC 61000-4-5 (surge); IPP = 3.2 A
1.3 Applications
„ Computers and peripherals
„ Audio and video equipment
„ Cellular handsets and accessories
„ Communication systems
„ Portable electronics
„ Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
PESD3V3L5UK
PESD5V0L5UK
Cd diode capacitance
PESD3V3L5UK
f = 1 MHz; VR = 0 V
PESD5V0L5UK
Min Typ Max Unit
- - 3.3 V
- - 5.0 V
- 20 24 pF
-
18.5 22
pF

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PESD3V3L5UK equivalent
NXP Semiconductors
PESD3V3L5UK; PESD3V3L5UK
Low capacitance unidirectional fivefold ESD protection diode arrays
6. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
PESD3V3L5UK
PESD5V0L5UK
IRM reverse leakage current
PESD3V3L5UK
VRWM = 3.3 V
PESD5V0L5UK
VRWM = 5.0 V
VBR breakdown voltage
IR = 1 mA
PESD3V3L5UK
PESD5V0L5UK
Cd diode capacitance
PESD3V3L5UK
f = 1 MHz;
VR = 0 V
PESD5V0L5UK
VCL clamping voltage
PESD3V3L5UK
IPP = 3.1 A
PESD5V0L5UK
IPP = 3 A
rdif differential resistance IR = 5 mA
PESD3V3L5UK
PESD5V0L5UK
Min Typ Max Unit
- - 3.3 V
- - 5.0 V
-
0.4 2
μA
- 0.08 0.5 μA
5.3 5.6
6.47 6.8
5.9 V
7.14 V
-
-
[1][2]
-
-
-
-
20 24
18.5 22
pF
pF
- 9.5 V
- 9.9 V
5 16
2.5 8
Ω
Ω
[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1, 3, 4, 5 or 6 to pin 2.
PESD3V3L5UK_PESD5V0L5UK
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
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Featured Datasheets

Part NumberDescriptionMFRS
PESD3V3L5UFThe function is Low capacitance unidirectional fivefold ESD protection diode arrays. NXP SemiconductorsNXP Semiconductors
PESD3V3L5UKThe function is Low capacitance unidirectional fivefold ESD protection diode arrays. NXP SemiconductorsNXP Semiconductors
PESD3V3L5UVThe function is (PESD3V3L5UV / PESD5V0L5UV) Low capacitance 5-fold ESD protection diode arrays. NXP SemiconductorsNXP Semiconductors

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