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Datasheet BUV20 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BUV20NPN Silicon Low Frequency High Power Switching Transistor

BUV20,BUV21,BUV22,BUV23,BUV24 NPN Silicon Low Frequency High Power Switching Transistor Features: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Switching Characteristic. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for
ETC
ETC		transistor
2BUV20Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUV20 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 25A ·High DC Current Gain- : hFE= 20(Min.)@ IC= 25A ·High Switching Speed APPLICATIONS ·Designed for high speed, high current, hig
Inchange Semiconductor
Inchange Semiconductor		transistor
3BUV2050 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUV20/D SWITCHMODE Series NPN Silicon Power Transistor . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A hFE min = 10 at IC = 50 A • Low VCE(sat): VCE(sat) max. =
Motorola Inc
Motorola Inc		transistor
4BUV20NPN Silicon Power Transistor

BUV20 SWITCHMODEt Series NPN Silicon Power Transistor SWITCHMODE series NPN silicon power transistors are designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A = 10 at IC = 50 A • Low VCE(sat): VCE(sat) max. = 0.6 V at IC = 25
ON Semiconductor
ON Semiconductor		transistor
5BUV20HIGH CURRENT NPN SILICON TRANSISTOR

® BUV20 HIGH CURRENT NPN SILICON TRANSISTOR s s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s SWITCHING REGULATORS s 1 2 TO-3 (version "S") DESCRIPTION The BUV2
STMicroelectronics
STMicroelectronics		transistor


BUV Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BUV10Silicon NPN Power Transistor

www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV10 DESCRIPTION ·High Switching Speed ·High Current Capability APPLICATIONS ·Designed for high current,high speed,high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL VCBO
Inchange Semiconductor
Inchange Semiconductor		transistor
2BUV10NBipolar NPN Device in a Hermetically sealed TO3 Metal Package

BUV10N Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 1.47 (0.058) 1.60 (0.063) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17
Seme LAB
Seme LAB		data
3BUV1120 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUV11/D SWITCHMODE Series NPN Silicon Power Transistor . . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A • Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 6 A • Ver
Motorola Inc
Motorola Inc		transistor
4BUV11SITCHMODE Series NPN Silicon Power Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUV11/D SWITCHMODE Series NPN Silicon Power Transistor . . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A • Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 6 A • Ver
ON Semiconductor
ON Semiconductor		transistor
5BUV12Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

BUV12 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 1.47 (0.058) 1.60 (0.063) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.
Seme LAB
Seme LAB		data
6BUV18Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUV18 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 40A ·High Switching Speed APPLICATIONS ·High efficiency converters ·Motor drive control ·Switching regulator Absolute maximum ra
Inchange Semiconductor
Inchange Semiconductor		transistor
7BUV18(BUV18 / BUV19) NPN High Current Switching Transistors

w w w .d e e h s a t a . u t4 m o c
ST Microelectronics
ST Microelectronics		transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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