(PDF) BUV48AFI Datasheet - Silicon NPN Power Transistor

Número de pieza	BUV48AFI
Descripción	Silicon NPN Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ulary suited for line-operated swtchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCES VCER VCEO Collector-Emitter Voltage (VBE= 0) Collector-Emitter Voltage (RBE= 10Ω) Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 1000 V 1000 V 450 V 7V 15 A 30 A 4A 20 A 55 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.2 ℃/W isc website：www.iscsemi.cn 1 isc Product Specification BUV48AFI 1 page

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PDF BUV48AFI Data sheet ( Hoja de datos )