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TLP3073 데이터시트 PDF




Toshiba Semiconductor에서 제조한 전자 부품 TLP3073은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 TLP3073 기능
기능 Photocouplers GaAs Infrared LED & Photo Triac
제조업체 Toshiba Semiconductor
로고 Toshiba Semiconductor 로고


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TLP3073 데이터시트, 핀배열, 회로
Photocouplers GaAs Infrared LED & Photo Triac
TLP3073,TLP3073F
TLP3073,TLP3073F
1. Applications
• Solid-State Relays
• Triac Drivers
• Home Electric Appliances
• Office Equipment
2. General
The TLP3073 consists of a non zero crossing photo triac, optically coupled to a gallium arsenide infrared emitting
diode. The TLP3073 is housed in the DIP6 package and guarantees insulation thickness of 0.4 mm (min). Therefore,
the TLP3073 meets the reinforced insulation class requirements of international safety standards.
3. Features
(1) Halogen-free
(2) Peak off-state voltage: 800 V (min)
(3) Non zero crossing functionary (NZC)
(4) Trigger LED current: 5 mA (max)
(5) On-state current: 100 mA (max)
(6) Isolation voltage: 5000 Vrms (min)
(7) Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)
CQC-approved: GB4943.1, GB8898 Japan Factory
Note 1: When a VDE approved type is needed, please designate the Option (D4).
Table 3.1 Mechanical Parameters
Characteristics
Creepage distances
Clearance distances
Internal isolation thickness
7.62 mm pitch
TLP3073
7.0 (min)
7.0 (min)
0.4 (min)
10.16 mm pitch
TLP3073F
8.0 (min)
8.0 (min)
0.4 (min)
Unit
mm
©2016 Toshiba Corporation
1
Start of commercial production
2015-08
2016-02-03
Rev.4.0




TLP3073 pdf, 반도체, 판매, 대치품
TLP3073,TLP3073F
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
LED Input forward current
IF 50 mA
Input forward current derating
(Ta 53 )
IF/Ta
-0.7 mA/
Input forward current (pulsed)
IFP (Note 1)
1
A
Input reverse voltage
VR 5 V
Junction temperature
Tj 125
Input power dissipation
PD 100 mW
Input power dissipation derating (Ta 25 )
PD/Ta
-1.0 mW/
Detector Off-state output terminal voltage
VDRM
800 V
R.M.S. on-state current
(Ta = 25 )
IT(RMS)
100 mA
(Ta = 70 )
50 mA
R.M.S. on-state current derating
(Ta 25 )
IT(RMS)/Ta
-1.1 mA/
ON-state current (pulsed)
IONP
(Note 2)
2
A
Peak non-repetitive surge current
ITSM
(Note 3)
1.2
A
Junction temperature
Tj 125
Output power dissipation
PO 300 mW
Output power dissipation derating (Ta 25 )
PO/Ta
-4.0 mW/
Common Total power dissipation
PT 400 mW
Total power dissipation derating (Ta 25 )
PT/Ta
-4.4 mW/
Operating temperature
Topr
-40 to 100
Storage temperature
Tstg
-55 to 125
Lead soldering temperature
(10 s)
Tsol
260
Isolation voltage
AC, 60 s, R.H. 60 % BVS (Note 4)
5000
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW) 100 µs, 100 pps
Note 2: Pulse width (PW) 100 µs, 120 pps
Note 3: Pulse width (PW) 10 ms
Note 4: This device is considered as a two-terminal device: Pins 1, 2 and 3 are shorted together, and pins 4 and 6 are
shorted together.
8. Recommended Operating Conditions (Note)
Characteristics
Symbol
Note
Min Typ. Max Unit
AC mains voltage
VAC
(Note 1)
480 V
Input forward current
IF 7.5 10 20 mA
ON-state current (pulsed)
IONP
 1 A
Operating temperature
Topr -25 85
Note: The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this datasheet should also be considered.
Note 1: AC use only.
©2016 Toshiba Corporation
4
2016-02-03
Rev.4.0

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TLP3073 전자부품, 판매, 대치품
TLP3073,TLP3073F
Fig. 12.7 Normalized IFT - Ta
Fig. 12.8 Normalized IDRM - Ta
Fig. 12.9 Normalized VDRM - Ta
Fig. 12.10 Normalized IH - Ta
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2016 Toshiba Corporation
7
2016-02-03
Rev.4.0

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관련 데이터시트

부품번호상세설명 및 기능제조사
TLP3073

Photocouplers GaAs Infrared LED & Photo Triac

Toshiba Semiconductor
Toshiba Semiconductor
TLP3073F

Photocouplers GaAs Infrared LED & Photo Triac

Toshiba Semiconductor
Toshiba Semiconductor

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