Datasheet.kr   

E50N06 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 E50N06
기능 Power MOSFET
제조업체 ESTEK
로고 ESTEK 로고 



전체 2 페이지

		

No Preview Available !

E50N06 데이터시트, 핀배열, 회로
E 50N06
HEXFET® Power MOSFET
Dynamic dv/dt Rating
175 ْC Operating Temperature
Fast switching
Ease of Paralleling
Simple Drive Requirements
VDSS = 60V
ID25 = 50A
RDS(ON) = 0.022
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50watts. The low
thermal resistance and low package cost of the TO-220 contribute to its
wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
ID@TC=25 ْC Continuous Drain Current, VGS@10V
ID@TC=100ْC Continuous Drain Current, VGS@10V
IDM Pulsed Drain Current
PD@TC=25ْC Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
Max.
50*
36
200
140
1.0
±20
100
4.5
55 to +175
300(1.6mm from case)
10 Ibf in(1.1N m)
Pin1–Gate
Pin2–Drain
Pin3–Source
Units
A
W
W/ ْC
V
mJ
V/ns
ْC
Thermal Resistance
Parameter
Min. Typ. Max.
RθJC
Junction-to-case
1.0
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
RθJA Junction-to-Ambient
62
Units
ْC/W
1






구       성총 2 페이지
다운로드[ E50N06.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

상호 : 아이지 인터내셔날

사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
E50N06

Power MOSFET

ESTEK
ESTEK

DataSheet.kr    |   2020   |  연락처   |  링크모음   |   검색  |   사이트맵