|
|
PDF MDF9N50BTH Data sheet ( Hoja de datos )
| Número de pieza | MDF9N50BTH | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MDF9N50BTH (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
MDP9N50B / MDF9N50B
N-Channel MOSFET 500V, 9.0 A, 0.85Ω
General Description
The MDP/F9N50B uses advanced Magnachip’s
MOSFET Technology, which provides low on-state
resistance, high switching performance and
excellent quality.
MDP/F9N50B is suitable device for SMPS, HID and
general purpose applications.
Features
VDS = 500V
ID = 9.0A
@VGS = 10V
RDS(ON) ≤ 0.85Ω @VGS = 10V
Applications
Power Supply
PFC
Ballast
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
※ Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
MDP9N50B MDF9N50B
500
±30
9.0 9.0*
5.5 5.5*
36 36*
120 38
0.95 0.3
12
4.5
300
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Dec 2011. Version 1.0
Symbol
RθJA
RθJC
MDP9N50B
62.5
1.05
MDF9N50B
62.5
3.3
Unit
oC/W
1 MagnaChip Semiconductor Ltd.
1 page  
102
Operation in This Area
is Limited by R DS(on)
101
100
10 µs
100 µs
1 ms
10 ms
100 ms
DC
10-1
10-2
10-1
Single Pulse
TJ=Max rated
TC=25℃
100 101 102
VDS, Drain-Source Voltage [V]
Fig.13 Maximum Safe Operating Area
MDF9N50B (TO-220F)
10000
8000
single Pulse
RthJC = 3.3℃/W
TC = 25℃
6000
4000
2000
0
1E-5 1E-4 1E-3 0.01
0.1
1
10
Pulse Width (s)
Fig.14 Single Pulse Maximum Power
Dissipation – MDF9N50B (TO-220F)
D=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
10-2
10-5
single pulse
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JC=3.3℃/W
10-4 10-3 10-2 10-1 100
t1, Rectangular Pulse Duration [sec]
101
Fig.15 Transient Thermal Response Curve
MDF9N50B (TO-220F)
Dec 2011. Version 1.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MDF9N50BTH.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MDF9N50BTH | N-Channel MOSFET | MagnaChip |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |