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부품번호 | GX3442 기능 |
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기능 | RF POWER GAN TRANSISTOR | ||
제조업체 | POLYFET RF DEVICES | ||
로고 | |||
polyfet rf devices
GX3442
General Description
Polyfet's GAN (on SiC) HEMT
power transistors contain no
internal matching; making them
suitable for both broadband and
narrow band applications.
The use of a thermally enhanced
package enables this device to
have superior heat dissipation
properties. The high drain break
down voltage permits this device
to operate over a wide voltage
range.
RF POWER GAN TRANSISTOR
120.0 Watts Single Ended
Package Style GX
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
Suitable for use across 1-2500Mhz
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Total
Device
Dissipation
160 Watts
Junction to
Case Thermal
Resistance
o
1.80 C/W
Maximum
Junction
Temperature
200 oC
Storage
Temperature
oo
-65 C to 150 C
Drain to
Source
Voltage
180 V
Gate to
Source
Voltage
-10 V to + 2 V
RF CHARACTERISTICS ( 120.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Gps Common Source Power Gain
Drain Efficiency
11
55
dB Idq = 0.50 A, Vds = 48.0 V, F = 2,000 MHz
% Idq = 0.50 A, Vds = 48.0 V, F = 2,000 MHz
VSWR Load Mismatch Tolerance
10:1 Relative Idq = 0.50 A, Vds = 48.0 V, F = 2,000 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Bvdss Drain Breakdown Voltage
250
V Ids = 20.00mA, Vgs = -8V
Idsat
Saturation Current
17.00
Amp
Vgs = +2V, Vds = 10V
Idss
Vgs
Ciss
Crss
Zero Bias Drain Current
Gate Bias for Drain Current
Common Source Input Capacitance
Common Source Feedback Capacitance
-2.4
20.0
0.90
6.0 mA
V
pF
pF
Vds = 48.0 V, Vgs = -8V
Vds = 48.0 V Ids = 0.50A
Vds = 48.0 Vgs =-8V, F = 1 MHz
Vds = 48.0 Vgs =-8V, F = 1 MHz
Coss Common Source Output Capacitance
12.0
pF Vds = 48.0 Vgs =-8V, F = 1 MHz
POLYFET RF DEVICES
REVISION 09/09/2013
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
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구 성 | 총 2 페이지수 | ||
다운로드 | [ GX3442.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
GX3441 | RF POWER GAN TRANSISTOR | POLYFET RF DEVICES |
GX3442 | RF POWER GAN TRANSISTOR | POLYFET RF DEVICES |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |