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ISL73127EH 데이터시트 PDF




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부품번호 ISL73127EH 기능
기능 Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
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ISL73127EH 데이터시트, 핀배열, 회로
Radiation Hardened Ultra High Frequency NPN/PNP
Transistor Arrays
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH,
ISL73128EH
The ISL73096, ISL73127 and ISL73128 are radiation
hardened bipolar transistor arrays. The ISL73096 consists of
three NPN transistors and two PNP transistors on a common
substrate. The ISL73127 consists of five NPN transistors on a
common substrate. The ISL73128 consists of five PNP
transistors on a common substrate.
The ISL73096EH, ISL73127EH and ISL73128EH devices
encompass all of the production testing of the ISL73096RH,
ISL73127RH and ISL73128RH devices and additionally are
tested in the Intersil Enhanced Low Dose Rate Sensitivity
(ELDERS) product manufacturing flow.
One of our bonded wafer, dielectrically isolated fabrication
processes provides an immunity to single event latch-up and
the capability of highly reliable performance in a radiation
environment.
The high gain-bandwidth product and low noise figure of these
transistors make them ideal for use in high frequency
amplifier and mixer applications. Monolithic construction of
the NPN and PNP transistors provides the closest electrical
and thermal matching possible. Access is provided to each
terminal of the transistors for maximum application flexibility.
Features
• Electrically screened to SMD # 5962-07218
• QML qualified per MIL-PRF-38535 requirements
• Radiation tolerance
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)*
- SEL immune . . . . . . . . . . Bonded wafer dielectric isolation
• NPN gain bandwidth product (FT) . . . . . . . . . . . . . . 8GHz (typ)
• NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130 (typ)
• NPN early voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . . . 50V (typ)
• PNP gain bandwidth product (FT). . . . . . . . . . . . . 5.5GHz (typ)
• PNP current gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . . 60 (typ)
• PNP early voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . . . 20V (typ)
• Noise figure (50) at 1GHz. . . . . . . . . . . . . . . . . . . 3.5dB (typ)
• Collector-to-collector leakage . . . . . . . . . . . . . . . . . . <1pA (typ)
• Complete isolation between transistors
* Limit established by characterization.
Related Literature
Applications
AN1503, Amplifier Design Using ISL73096RH,
ISL73127RH, ISL73128RH Transistor Arrays
TID REPORT for the Radiation Hardened UHF NPN/PNP
transistor array
• High frequency amplifiers and mixers
• High frequency converters
• Synchronous detector
120
115
110
105
100
95
90
85
80 0
50 100 150 200 250 300
krad(Si)
FIGURE 1. NPN BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW
DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE
(HDR) TO 300krads(Si)
75
70
65
60
55
50
45
40
0 50 100 150 200 250 300
krad(Si)
FIGURE 2. PNP BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW
DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE
(HDR) TO 300krads(Si)
June 27, 2014
FN6475.4
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2007, 2009, 2012, 2014. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.




ISL73127EH pdf, 반도체, 판매, 대치품
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
Pin Configurations
ISL73096RH, ISL73096EH
(16 LD FLATPACK) CDFP4-F16
TOP VIEW
1
2 Q1
3
4
5 Q2
6
7
8 Q3
NC 16
15
Q5 14
13
12
Q4 11
10
9
ISL73127RH, ISL73127EH
(16 LD FLATPACK) CDFP4-F16
TOP VIEW
1
2
3
4 Q2
5 NC
6
7
8 Q3
16
Q1 15
14
Q5 13
12
11
10
Q4 9
ISL73128RH, ISL73128EH
(16 LD FLATPACK) CDFP4-F16
TOP VIEW
1
2
3
4 Q2
5 NC
6
7
8 Q3
16
Q1 15
14
Q5 13
12
11
10
Q4 9
Pin Descriptions
PIN #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
PIN NAME/DESCRIPTION
ISL73096RH, ISL73096EH
Q1 BASE
Q1 EMITTER
Q1 COLLECTOR
Q2 EMITTER
Q2 BASE
Q2 COLLECTOR
Q3 EMITTER
Q3 BASE
Q3 COLLECTOR
Q4 EMITTER
Q4 BASE
Q4 COLLECTOR
Q5 EMITTER
Q5 BASE
Q5 COLLECTOR
NC (No internal Connection)
PIN NAME/DESCRIPTION
ISL73127RH/ISL73128RH
ISL73127EH/ISL73128EH
Q1 COLLECTOR
Q2 COLLECTOR
Q2 EMITTER
Q2 BASE
NC (No internal Connection)
Q3 COLLECTOR
Q3 EMITTER
Q3 BASE
Q4 BASE
Q4 EMITTER
Q4 COLLECTOR
Q5 COLLECTOR
Q5 EMITTER
Q5 BASE
Q1 BASE
Q1 EMITTER
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ISL73127EH 전자부품, 판매, 대치품
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
Typical Performance Curves +25°C unless otherwise specified. (Continued)
VCE = -3V
5.0
VCE = -5V
160
140
120
100
80
60
40
20
0
-1µ
-10µ -100µ -1m -10m
COLLECTOR CURRENT (A)
-100m
FIGURE 11. PNP DC CURRENT GAIN vs COLLECTOR CURRENT
4.0
VCE = -3V
3.0
VCE = -1V
2.0
1.0
-0.1
-1.0 -10
COLLECTOR CURRENT (mA)
-100
FIGURE 12. PNP GAIN BANDWIDTH PRODUCT vs COLLECTOR
CURRENT
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ISL73127EH

Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

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