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PDF ISL73840SEH Data sheet ( Hoja de datos )
| Número de pieza | ISL73840SEH | |
| Descripción | Radiation Tolerant 30V 16-Channel Analog Multiplexer | |
| Fabricantes | Intersil | |
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DATASHEET
Radiation Tolerant 30V 16-Channel Analog Multiplexer
ISL73840SEH
The ISL73840SEH is a radiation tolerant, 16-channel high ESD
protected multiplexer that is fabricated using Intersil’s
proprietary P6SOI (Silicon On Insulator) process technology. It
operates with a dual supply voltage ranging from ±10.8V to
±16.5V. It has a 4-bit address plus an enable pin that can be
driven with adjustable logic thresholds to conveniently select 1
of 16 available channels. An inactive channel is separated
from an active channel by a high impedance, which inhibits
any interaction between them.
The ISL73840SEH’s low rON allows for improved signal
integrity and reduced power losses. The ISL73840SEH is also
designed for cold sparing making it excellent for high reliability
applications that have redundancy requirements. It is
designed to provide a high impedance to the analog source in
a powered off condition, making it easy to add additional
backup devices without loading signal sources. The
ISL73840SEH also incorporates input analog overvoltage
protection, which will disable the switch to protect downstream
devices.
The ISL73840SEH is available in a 28 Ld CDFP or die form and
operates across the extended temperature range of -55°C to
+125°C.
There is also a 32-channel version available offered in a 48 Ld
CQFP, please refer to the ISL73841SEH datasheet for more
information. For a list of differences please refer to Table 1 on
page 3.
Features
• DLA SMD# 5962-15219
• Fabricated using P6SOI process technology
• ESD protection 8kV (HBM)
• Rail-to-rail operation
• Overvoltage protection
• Low rON. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <500Ω (typical)
• Flexible split rail operation
- Positive supply above GND (V+) . . . . . . . +10.8V to +16.5V
- Negative supply below GND (V-) . . . . . . . . -10.8V to -16.5V
• Adjustable logic threshold control with VREF pin
• Cold sparing capable (from ground). . . . . . . . . . . . . . . . .±25V
• Analog overvoltage range (from ground) . . . . . . . . . . . . .±35V
• Off switch leakage . . . . . . . . . . . . . . . . . . . 100nA (maximum)
• Transition times (tR, tF) . . . . . . . . . . . . . . . . . . . 500ns (typical)
• Break-before-make switching
• Grounded metal lid (internally connected)
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation tolerance
- Low dose rate (0.01rad(Si)/s) . . . . . 50krad(Si) (see Note)
- SEB LETTH . . . . . . . . . . . . . . . . . . . . . . . . .86.4 MeV•cm2/mg
NOTE: Product capability established by initial characterization. All
subsequent lots are assurance tested to 50krad (0.01rad(Si)/s)
wafer-by-wafer.
ISL73840SEHM
IN01
IN02
IN03
.
.
.
IN16
OUT
ADC
4
ADDRESS
EN
FIGURE 1. TYPICAL APPLICATION
600
500
400 +25°C
+125°C
300
200
100
-55°C
0-20 -15 -10 -5 0 5 10 15 20
SWITCH INPUT VOLTAGE (V)
FIGURE 2. rDS(ON) vs POWER SUPPLY ACROSS SWITCH INPUT
COMMON-MODE VOLTAGE AT +25°C
May 31, 2016
FN8845.1
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2016. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
1 page  
ISL73840SEH
Absolute Maximum Ratings
Positive Supply Voltage above GND (V+) (Note 5). . . . . . . . . . . . . . . . . +20V
Negative Supply Voltage below GND (V-) (Note 5 . . . . . . . . . . . . . . . . . .-20V
Maximum Supply Voltage Differential (V+ to V-) (Note 5) . . . . . . . . . . . 40V
Maximum Current Through Selected Switch. . . . . . . . . . . . . . . . . . . . 10mA
Analog Input Voltage (INx)
From GND (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±35V
Digital Input Voltage Range (EN, Ax) . . . . . . . . . . . . . . . . . . . . . . . . GND to V+
VREF to GND (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16.5V
ESD Tolerance
Human Body Model (Tested per MIL-STD-883 TM 3015) . . . . . . . . . 8kV
Charged Device Model (Tested per JESD22-C101D) . . . . . . . . . . . . 250V
Machine Model (Tested per JESD22-A115-A) . . . . . . . . . . . . . . . . . . 250V
Thermal Information
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
28 Ld CDFP (Notes 3, 4) . . . . . . . . . . . . . . .
48
4
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C
Positive Supply Voltage Above GND (V+) . . . . . . . . . . . . . +10.8V to +16.5V
Negative Supply Voltage Below GND (V-) . . . . . . . . . . . . . . .-10.8V to -16.5V
Supply Voltage Differential (V+ to V-) . . . . . . . . . . . . . . . . . . . . 21.6V to 33V
VREF to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V to 5.5V
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
4. For JC, the “case temp” location is the center of the package underside.
5. Tested in a heavy ion environment at LET = 86.3 MeV•cm2/mg at +125°C.
Electrical Specifications (±15V) V+ = 15V, V- = -15V, VAH = 4V, VAL = 0.8V, VREF = VEN = 5V, TA= +25°C, unless otherwise noted.
Boldface limits apply across the operating temperature range, -55°C to +125°C or across a total ionizing dose of 50krad(Si) with exposure at a low dose
rate of <10mrad(Si)/s.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
(Note 6)
MAX
TYP (Note 6)
UNIT
VS Analog Input Signal Range
V- - V+ V
rON Channel ON-Resistance
ΔrON
rON Match Between Channels
V± = ±15.0V, ±16.5V
IOUT = -1mA, VIN = +5V, -5V
V± = ±15.0V, ±16.5V
IOUT = -1mA, VIN = V+, V-
VIN = +5V, -5V; IOUT = -1mA
- - 500 Ω
- - 700 Ω
- 10 20 Ω
RFLAT(ON)
IS(OFF)
ON-Resistance Flatness
Switch Off Leakage
VIN = +5V, -5V
VIN = V+ - 5V, V± = ±16.5V,
All unused inputs are tied to V- + 5V
- - 25 Ω
-10 - 10 nA
Post radiation
-100 - 100 nA
VIN = V- + 5V, V± = ±16.5V
All other inputs = V+ - 5V
TA = +25°C
TA = +125°C
Post radiation
-10 - 10 nA
-20 - 20 nA
-100 - 100 nA
IS(OFF) POWER OFF Switch Off Leakage with Device
Powered Off
VIN = +25V, V± = VEN = VA = VREF = 0V
TA = +25°C, V± = 0V
TA = -55°C, +125°C
Post radiation
-10 - 10 nA
-10 - 80 nA
-100 - 100 nA
VIN = -25V, V± = VEN = VA = VREF = 0V
TA = +25°C, V± = 0V
TA = -55°C, +125°C
Post radiation
-10 - 10 nA
-80 - 10 nA
-100 - 100 nA
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FN8845.1
May 31, 2016
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ISL73840SEH
Timing Diagrams
+4.0V
+0.8V
ISL71840SEH
50Ω
A3 IN01
A2
A1
IN02-IN15
A0 IN16
+0.8V EN
OUT
+15V, 0V
0V, +15V
10kΩ
VOUT
50pF
4V
ADDRESS
0.8V
15V
OUTPUT
“1111”
50%
“0000”
50%
tAHL
50%
tALH
50%
FIGURE 4. ADDRESS TIME TO OUTPUT TEST CIRCUIT
0V
FIGURE 5. ADDRESS TIME TO OUTPUT DIAGRAM
ISL71840SEH
A3 IN01
A2
A1
IN02-IN16
A0
+10V
EN OUT
VOUT
+4.0V
+0.8V
50Ω
1kΩ 50pF
FIGURE 6. TIME TO ENABLE/DISABLE OUTPUT TEST CIRCUIT
+4.0V
+0.8V
ISL71840SEH
A3 IN01
A2
A1
IN02-IN15
A0
50Ω
IN16
+5V
+0.8V EN
OUT
VOUT
1kΩ 50pF
FIGURE 8. BREAK-BEFORE-MAKE TEST CIRCUIT
4V
ENABLE
50%
50%
0.8V
10V
OUTPUT
tENABLE
50%
tDISABLE
50%
0V
FIGURE 7. TIME TO ENABLE/DISABLE OUTPUT DIAGRAM
4V
ADDRESS
0.8V
5V
OUT
50%
0V tBBM
FIGURE 9. BREAK-BEFORE-MAKE DIAGRAM
+4.0V
+0.8V
ISL71840SEH
A3 IN01
A2
A1
IN02-IN15
50Ω A0 IN16
0V
+0.8V EN
OUT
VOUT
100pF
FIGURE 10. CHARGE INJECTION TEST CIRCUIT
4V
ADDRESS
0.8V
15V
OUT
Q = 100pF * ΔVOUT
ΔVOUT
0V
FIGURE 11. CHARGE INJECTION DIAGRAM
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FN8845.1
May 31, 2016
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| PDF Descargar | [ Datasheet ISL73840SEH.PDF ] | |
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