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부품번호 | DGD21814 기능 |
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기능 | HIGH-SIDE AND LOW-SIDE GATE DRIVER | ||
제조업체 | Diodes | ||
로고 | |||
전체 11 페이지수
Description
The DGD21814 is a high voltage / high speed gate driver capable of
driving N-Channel MOSFETs and IGBTs in a half bridge configuration.
High voltage processing techniques enable the DGD21814’s high-side
to switch to 600V in a bootstrap operation.
The DGD21814 logic inputs are compatible with standard TTL and
CMOS levels (down to 3.3V) for easy interfacing with controlling
devices. The driver outputs feature high pulse current buffers
designed for minimum driver cross conduction.
The DGD21814 is offered in SO-14 (Type TH) package and the
operating temperature extends from -40°C to +125°C.
Applications
DC-DC Converters
DC-AC Inverters
AC-DC Power Supplies
Motor Controls
Class D Power Amplifiers
DGD21814
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO14
Features
Floating high-side driver in bootstrap operation to 600V
Drives two N-Channel MOSFETs or IGBTs in a half bridge
configuration
1.9A source / 2.3A sink output current capability
Outputs tolerant to negative transients
Wide low-side gate driver and logic supply: 10V to 20V
Logic input (HIN and LIN) 3.3V capability
Schmitt triggered logic inputs with internal pull down
Undervoltage lockout for high and low side drivers
Extended temperature range: -40°C to +125°C
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony free. “Green” Device (Note 3)
Mechanical Data
Case: SO-14 (Type TH)
Case material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 3 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.142 grams (Approximate)
Typical Configuration
SO-14 (Type TH)
Top View
Ordering Information (Note 4)
Product
DGD21814S14-13
Marking
DGD21814
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DGD21814
YY WW
DGD21814
Document Number DS38329 Rev. 1 - 2
= Manufacturer’s marking
DGD21814 = Product Type Marking Code
YY = Year (ex: 16 = 2016)
WW = Week (01 - 53)
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April 2016
© Diodes Incorporated
DGD21814
DC Electrical Characteristics (VBIAS (VCC, VBS) = 15V, @TA = +25°C, unless otherwise specified.) (Note 7)
Parameter
Symbol Min Typ Max Unit
Conditions
Logic “1” input voltage
Logic “0” input voltage
VIH 2.5 – – V VCC = 10V to 20V
VIL – – 0.8 V VCC = 10V to 20V
High level output voltage, VBIAS - VO
Low level output voltage, VO
VOH – – 1.4 V IO = 0mA
VOL – – 0.2 V IO = 20mA
Offset supply leakage current
ILK – – 50 µA VB = VS = 600V
Quiescent VBS supply current
IBSQ
20 60 150 µA VIN = 0V or 5V
Quiescent VCC supply current
Logic “1” input bias current
ICCQ
IIN+
50 120 240 uA VIN = 0V or 5V
– 25 60 µA VIN = 5V
Logic “0” input bias current
IIN- – – 5.0 µA VIN = 0V
VBS supply undervoltage positive going threshold
VBSUV+
8.0
8.9 9.8 V –
VBS supply undervoltage negative going threshold
VBSUV-
7.4
8.2 9.0 V –
VCC supply undervoltage positive going threshold
VCCUV+
8.0
8.9 9.8 V –
VCC supply undervoltage negative going threshold
VCCUV-
7.4
8.2 9.0 V –
Output high short circuit pulsed current
IO+ 1.4 1.9 – A VO = 0V, PW ≤ 10µs
Output low short circuit pulsed current
IO- 1.8 2.3 – A VO = 15V, PW ≤ 10µs
Note:
7. The VIN and IIN parameters are applicable to the two logic input pins: HIN and LIN. The VO and IO parameters are applicable to the respective output pins:
HO and LO.
AC Electrical Characteristics (VBIAS (VCC, VBS) = 15V, CL = 1,000pF, @TA = +25°C, unless otherwise specified.)
Parameter
Turn-on propagation delay
Turn-off propagation delay
Delay matching, HO & LO turn-on/off
Turn-on rise time
Turn-off fall time
Symbol Min Typ Max Unit
Conditions
tON – 180 270 ns VS = 0V
tOFF – 220 330 ns VS = 0V or 600V
tDM – – 35 ns –
tr – 40 60 ns VS = 0V
tf – 20 35 ns VS = 0V
DGD21814
Document Number DS38329 Rev. 1 - 2
4 of 11
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April 2016
© Diodes Incorporated
4페이지 Typical Performance Characteristics (continued)
DGD21814
DGD21814
Document Number DS38329 Rev. 1 - 2
7 of 11
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April 2016
© Diodes Incorporated
7페이지 | |||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |