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Número de pieza | TQP9107 | |
Descripción | 2-stage Power Amplifier | |
Fabricantes | TriQuint Semiconductor | |
Logotipo | ||
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No Preview Available ! Applications
Wireless Infrastructure
Repeaters, Boosters, DAS
High Power Amplifiers
Small cell BTS
TQP9107
699-960 MHz 2-stage Power Amplifier
3.5 x 4.5 mm Leadless SMT Package
Product Features
699 – 960 MHz Frequency Range
35.5 dB gain
+46 dBm Output IP3 at Pout = +24 dBm/tone
31% PAE at +27 dBm Pout
Internally Matched
Integrated Inter-Stage Matching
Bias Adjustable
Low idle current
Functional Block Diagram
RFin VPD1 VPD2 N/C N/C
13 12 11 10 9
N/C RFout
87
AMP1
Matching
Network
AMP2
Matching
Network
Pin 1
Reference Mark
Package Topside
12
VBIAS VCC
34
N/C N/C
5
N/C
Top View
6
N/C
Exposed
Backside Pad
GND
General Description
The TQP9107 is a high-efficiency two-stage power
amplifier in a low-cost surface-mount package. The
amplifier is able to achieve 31% power added efficiency
at +27 dBm output power while operating with a low 84
mA idle current. The amplifier is designed to ensure that
all odd-order IMD products are below −17 dBm at all
output power levels below +24 dBm/tone.
The TQP9107 integrates two high performance amplifier
stages onto a module to allow for a compact system
design and requires very few external components for
operation. The amplifier is bias adjustable allowing the
amplifier’s power consumption to be optimized. The
TQP9107 is available in a lead-free/RoHS-compliant 13-
pin 3.5 x 4.5mm surface mount package and is pin-
compatible to the higher frequency band version in the
family with the TQP9108 (1.7-2.17 GHz).
Pin Configuration
Pin No.
1
2
3, 4, 5, 6, 8, 9, 10
7
11
12
13
Backside Pad
Label
VBIAS
VCC
GND or N/C
RFout
VPD1
VPD2
RFin
GND
Ordering Information
Part No.
TQP9107
TQP9107-PCB
Description
699-960 MHz Power Amplifier
Evaluation board
Datasheet: Rev H 03-25-16
© 2016 TriQuint Semiconductor, Inc
- 1 of 9 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com
1 page TQP9107
699-960 MHz 2-stage Power Amplifier
Typical Performance at Vcc = 5V
Test Conditions: VCC=+5 V, Vpd=+4.3 V, Temp.=+25°C, 50Ω System
Parameter
Conditions
Frequency
Gain
Input Return Loss
Output P1dB
Output IP3
Pout= +24 dBm/tone, f= 1 MHz
Quiescent Collector Current, ICQ
Typical Value
750 840 880 940
35.5 36.2 35.8 34.0
-13 -9
-9 -10
32.9 32.5 32.1 31.9
42.1 43.5 44.0 46.2
87
Units
MHz
dB
dB
dBm
dBm
mA
Performance Plots
38
36
34
32
30
28
700
1,000
900
800
700
600
500
400
300
200
100
0
5
Gain vs. Frequency
Temp.=+25°C
800 900
Frequency (MHz)
Icc vs. Pout
Temp.=+25°C
1000
10 15 20 25 30 35
Pout (dBm)
P1dB vs. Frequency
35
Temp.=+25°C
34
33
32
31
30
750
-30
-35
-40
800 850 900
Frequency (MHz)
ACLR
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
950
-45
-50
750 MHz
840 MHz
-55 880 MHz
940 MHz
-60
14 15 16 17 18 19 20 21 22 23 24 25
Pout (dBm)
50
45
40
35
30
14
OIP3 vs. Pout/tone
750 MHz
840 MHz
880 MHz
940 MHz
Temp.=+25°C
16 18 20 22
Pout/Tone (dBm)
24
Datasheet: Rev H 03-25-16
© 2016 TriQuint Semiconductor, Inc
- 5 of 9 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet TQP9107.PDF ] |
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