PDF TQP0102 Data sheet ( Hoja de datos )

Número de pieza	TQP0102
Descripción	GaN Power Transistor
Fabricantes	TriQuint Semiconductor
Logotipo
Hay una vista previa y un enlace de descarga de TQP0102 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas
No Preview Available ! Applications • Small Cell Base Station • Microcell Base Station Driver • Active Antenna • General Purpose Applications TQP0102 5 W, DC to 4 GHz, GaN Power Transistor Product Features • Operating Frequency Range: DC to 4 GHz • Output Power (PSAT): 5 W • Drain Efficiency: 68% • Linear Gain: 19 dB • Package Dimensions: 3 x 3 x 0.85 mm 16 Pin 3x3mm QFN Functional Block Diagram N/C 1 VG, RF In 2 N/C 3 N/C 4 16 15 14 13 12 N/C 11 VD, RF Out 10 VD, RF Out 9 N/C 5678 General Description The TQP0102 is a wide band over-molded QFN discrete GaN power amplifier. The device is a single stage unmatched power amplifier transistor. The TQP0102 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell applications. The TQP0102 can also be used in microcell and active antenna applications. The wide bandwidth of the TQP0102 makes it suitable for many different applications from DC to 4 GHz. TQP0102 can deliver PSAT of 5 W at 28 to 32 V operation. Lead-free and ROHS compliant. Pin Configuration Pin No. 1, 3-9, 12-16 2 10-11 Backside Paddle Label N/C RF IN, VG RF OUT, VD RF/DC GND Ordering Information Part No. ECCN Description TQP0102 EAR99 5 W, DC to 4 GHz, GaN PA TQP0102-PCB EAR99 2.5-2.7 GHz Evaluation Board Preliminary Datasheet: Rev E 09-28-15 © 2014 TriQuint - 1 of 10 - Disclaimer: Subject to change without notice www.triquint.com 1 page TQP0102 5 W, DC to 4 GHz, GaN Power Transistor Performance Plots Test conditions unless otherwise noted: VD = 32 V, ICQ = 25 mA, T = 25°C, 2.6 GHz single-ended application circuit Gain vs. Output Power 22 VG = −2.67 V, VD = 32 V, ICQ = 25 mA 21 Pulse CW: Duty Cycle = 20%, Pulse Period = 500 µs 20 19 18 2500 MHz 2600 MHz 17 2700 MHz 16 15 Temp. = +25°C 14 18 20 22 24 26 28 30 32 34 36 38 Output Power (dBm) Gain vs. Average Output Power 22 VG = −2.63 V, VD = 32 V, ICQ = 25 mA Temp. = +25°C 21 WCDMA, PAR = 8 dB @ 0.01% CCDF 20 19 18 17 2500 MHz 16 2600 MHz 2700 MHz 15 14 25 26 27 28 29 30 31 32 33 Average Output Power (dBm) Peak Power vs. Average Output Power 39 VG = −2.63 V, VD = 32 V, ICQ = 25 mA Temp. = +25°C WCDMA, PAR = 8 dB @ 0.01% CCDF 38 37 36 35 34 2500 MHz 2600 MHz 33 2700 MHz 32 25 26 27 28 29 30 31 32 33 Average Output Power (dBm) Drain Efficiency vs. Output Power 80 VG = −2.67 V, VD = 32 V, ICQ = 25 mA 70 Pulse CW: Duty Cycle = 20%, Pulse Period = 500 µs 60 2500 MHz 50 2600 MHz 2700 MHz 40 30 20 10 Temp. = +25°C 0 18 20 22 24 26 28 30 32 34 36 38 Output Power (dBm) Drain Efficiency vs. Average Output Power 80 VG = −2.63 V, VD = 32 V, ICQ = 25 mA Temp. = +25°C 70 WCDMA, PAR = 8 dB @ 0.01% CCDF 60 50 40 30 20 2500 MHz 10 2600 MHz 2700 MHz 0 25 26 27 28 29 30 31 32 33 Average Output Power (dBm) ACPR vs. Average Output Power -20 VG = −2.63 V, VD = 32 V, ICQ = 25 mA Temp. = +25°C -22 WCDMA, PAR = 8 dB @ 0.01% CCDF -24 -26 -28 -30 -32 -34 2500 MHz 2600 MHz -36 2700 MHz -38 -40 25 26 27 28 29 30 31 32 33 Average Output Power (dBm) Preliminary Datasheet: Rev E 09-28-15 © 2014 TriQuint - 5 of 10 - Disclaimer: Subject to change without notice www.triquint.com 5 Page

Páginas	Total 10 Páginas
PDF Descargar	[ Datasheet TQP0102.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
TQP0102	GaN Power Transistor	TriQuint Semiconductor
TQP0103	GaN Power Transistor	TriQuint Semiconductor
TQP0104	GaN Power Transistor	TriQuint Semiconductor

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar