|
|
|
부품번호 | 50S380CE 기능 |
|
|
기능 | Power Transistor | ||
제조업체 | Infineon | ||
로고 | |||
IPD50R380CE
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
0.38
Ω
ID 14.1 A
Qg,typ
24.8
nC
ID,pulse
32.4
A
Eoss @ 400V
2.54
µJ
Type/OrderingCode
IPD50R380CE
Package
PG-TO 252
Marking
50S380CE
DPAK
tab
2
1
3
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.3,2016-06-13
500VCoolMOSªCEPowerTransistor
IPD50R380CE
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage curent
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Min.
500
2.50
-
-
-
-
-
-
Values
Typ. Max.
--
3 3.50
-1
10 -
- 100
0.35 0.38
0.90 -
3-
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=0.26mA
µA
VDS=500V,VGS=0V,Tj=25°C
VDS=500V,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
Ω
VGS=13V,ID=3.2A,Tj=25°C
VGS=13V,ID=3.2A,Tj=150°C
Ω f=1MHz,opendrain
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance, energy
related1)
Effective output capacitance, time
related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
Values
Typ. Max.
584 -
40 -
32 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=0...400V
- 133 - pF ID=constant,VGS=0V,VDS=0...400V
-
7.2 -
ns
VDD=400V,VGS=13V,ID=3.9A,
RG=3.4Ω
-
5.6 -
ns
VDD=400V,VGS=13V,ID=3.9A,
RG=3.4Ω
-
35 -
ns
VDD=400V,VGS=13V,ID=3.9A,
RG=3.4Ω
-
8.6 -
ns
VDD=400V,VGS=13V,ID=3.9A,
RG=3.4Ω
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
-
-
-
-
Values
Typ. Max.
3.1 -
13.1 -
24.8 -
5.3 -
Unit Note/TestCondition
nC VDD=400V,ID=3.9A,VGS=0to10V
nC VDD=400V,ID=3.9A,VGS=0to10V
nC VDD=400V,ID=3.9A,VGS=0to10V
V VDD=400V,ID=3.9A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS
Final Data Sheet
4 Rev.2.3,2016-06-13
4페이지 500VCoolMOSªCEPowerTransistor
IPD50R380CE
Typ.outputcharacteristicsTj=25°C
40
35
30
25
20
15
10
5
0
0 5 10
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
20 V
10 V
8V
Typ.outputcharacteristicsTj=125°C
25
20
15
7V
10
6V
5.5 V
5
5V
4.5 V
0
15 20 0
5 10
VDS[V]
ID=f(VDS);Tj=125°C;parameter:VGS
20 V
10 V
8V
7V
6V
5.5 V
5V
4.5 V
15 20
Typ.drain-sourceon-stateresistance
1.4
Drain-sourceon-stateresistance
1.2
1.2
5.5 V
5V 6V
6.5 V
7V
1.0
1.0
0.8
0.6
98%
typ
10 V
0.4
0.8
0.2
0.6
0
5 10
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
15
0.0
20 -50 -25 0 25 50 75 100 125 150 175
Tj[°C]
RDS(on)=f(Tj);ID=3.2A;VGS=13V
Final Data Sheet
7 Rev.2.3,2016-06-13
7페이지 | |||
구 성 | 총 13 페이지수 | ||
다운로드 | [ 50S380CE.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
50S380CE | Power Transistor | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |