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TLP267J 데이터시트 PDF




Toshiba Semiconductor에서 제조한 전자 부품 TLP267J은 전자 산업 및 응용 분야에서
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부품번호 TLP267J 기능
기능 GaAs Infrared LED & Photo Triac Photocouplers
제조업체 Toshiba Semiconductor
로고 Toshiba Semiconductor 로고


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TLP267J 데이터시트, 핀배열, 회로
Photocouplers GaAs Infrared LED & Photo Triac
TLP267J
TLP267J
1. Applications
• Triac Drivers
• Programmable Logic Controllers (PLCs)
• AC-Output Modules
• Solid-State Relays
2. General
The TLP267J consists of a non zero crossing photo triac, optically coupled to a gallium arsenide infrared emitting
diode. The TLP267J is housed in the SO6 package and guarantees a creepage distance of 5.0 mm (min), a clearance
of 5.0 mm (min) and insulation thickness of 0.4 mm (min). Therefore, the TLP267J meets the reinforced insulation
class requirements of international safety standards.
3. Features
(1) Peak off-state voltage: 600 V (min)
(2) Non zero crossing functionary (NZC)
(3) Trigger LED current: 3 mA (max)
(4) On-state current: 70 mA (max)
(5) Isolation voltage: 3750 Vrms (min)
(6) Safety standards
UL-approved: UL1577 File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A, File No.E67349
VDE-approved: Option (V4) EN60747-5-5 (Note)
Maximum operating insulation voltage: 707 Vpeak
Highest permissible overvoltage: 6000 Vpeak
Note: When an EN60747-5-5 approved type is needed, please designate the Option (V4).
Table Trigger LED Current (Note) (Unless otherwise specified, Ta = 25 )
Rank
IFT Rank
Marking
Test Condition
Trigger LED Current IFT Trigger LED Current IFT
(min)
(max)
None
(IFT2)
3 VT = 6 V
2 VT = 6 V
3
2
Note:
Specify both the part number and a rank in this format when ordering.
Example: TLP267J (IFT2)
For safety standard certification, however, specify the part number alone.
Example: TLP267J
Unit
mA
Start of commercial production
2013-10
1 2015-03-13
Rev.5.0




TLP267J pdf, 반도체, 판매, 대치품
9. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
LED Input forward voltage
Input reverse current
Input capacitance
Detector Peak off-state current
Peak on-state voltage
Holding current
Critical rate of rise of off-state
voltage
Critical rate of rise of
commutating voltage (dv/dt)
Symbol
VF
IR
Ct
IDRM
VTM
IH
dv/dt
dv/dt(c)
Note
Test Condition
IF = 10 mA
VR = 5 V
V = 0 V, f = 1 MHz
VDRM = 600 V
ITM = 70 mA
Vin = 240 V, Ta = 85
See Fig. 9.1
Vin = 60 Vrms, IT = 15 mA
See Fig. 9.1
Min
1.0
TLP267J
Typ. Max Unit
1.27 1.4
V
10 µA
30 pF
10 1000 nA
1.7 2.8
V
0.2 mA
500 V/µs
0.2
Fig. 9.1 dv/dt Test Circuit
10. Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Test Condition
Min Typ. Max Unit
Trigger LED current
Turn-on time
IFT VT = 6 V
ton VD = 6 4 V, RL = 100 ,
IF = Rated IFT × 1.5 mA

3 mA
  100 µs
11. Isolation Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Test Condition
Min Typ. Max Unit
Total capacitance (input to
output)
CS (Note 1) VS = 0 V, f = 1 MHz
0.8 pF
Isolation resistance
Isolation voltage
RS (Note 1) VS = 500 V, R.H. 60%
BVS (Note 1) AC, 60 s
AC, 1 s in oil
1 × 1012
3750
1014
10000
Vrms
DC, 60 s in oil
10000
Vdc
Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
4 2015-03-13
Rev.5.0

4페이지










TLP267J 전자부품, 판매, 대치품
TLP267J
13. Soldering and Storage
13.1. Precautions for Soldering
The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective
of whether a soldering iron or a reflow soldering method is used.
• When using soldering reflow.
The soldering temperature profile is based on the package surface temperature.
(See the figure shown below, which is based on the package surface temperature.)
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
Fig. 13.1.1 An example of a temperature profile when lead(Pb)-free solder is used
• When using soldering flow
Apply preheating of 150 (package surface temperature) for 60 to 120 seconds.
Mounting condition of 260 within 10 seconds is recommended.
Flow soldering must be performed once.
• When using soldering Iron
Complete soldering within 10 seconds for lead temperature not exceeding 260 or within 3 seconds not
exceeding 350 .
Heating by soldering iron must be done only once per lead.
13.2. Precautions for General Storage
• Avoid storage locations where devices may be exposed to moisture or direct sunlight.
• Follow the precautions printed on the packing label of the device for transportation and storage.
• Keep the storage location temperature and humidity within a range of 5 to 35 and 45% to 75%,
respectively.
• Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
• Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the
solderability of the leads.
• When restoring devices after removal from their packing, use anti-static containers.
• Do not allow loads to be applied directly to devices while they are in storage.
• If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.
7 2015-03-13
Rev.5.0

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TLP267J

GaAs Infrared LED & Photo Triac Photocouplers

Toshiba Semiconductor
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