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PDF DMNH6012LK3Q Data sheet ( Hoja de datos )

Número de pieza DMNH6012LK3Q
Descripción N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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Green DMNH6012LK3Q
60V 175°C N-CHANNEL ENHANCEMENT MOQDE MOSFET
Product Summary
BVDSS
60V
RDS(ON) Max
12m@ VGS = 10V
18m@ VGS = 4.5V
ID Max
TC = +25°C
80A
70A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AECQ101, supported by a
PPAP and is ideal for use in:
Engine Management Systems
Body Control Electronics
DC/DC Converters
Features
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures more Reliable
and Robust End Application
Low On-Resistance
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Finish Annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.33 grams (Approximate)
Top View
Pin Out Top View
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
Case
Packaging
DMNH6012LK3Q-13
TO252 (DPAK)
2500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
H6012L
YYWW
=Manufacturers Marking
H6012L = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
DMNH6012LK3Q
Document number: DS37431 Rev. 1 - 2
1 of 7
www.diodes.com
June 2016
© Diodes Incorporated

1 page




DMNH6012LK3Q pdf
1000
100
RDS(ON) Limited
PW=1ms
10
1
0.1
0.01
PW=10ms
PW=100ms
TJ(MAX)=175
TC=25
PW=1s
Single Pulse
DUT on 1*MRP board
VGS=10V
PW=10s
DC
0.01 0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13. SOA, Safe Operation Area
100
1600
1400
1200
1000
800
600
400
200
0
25
DMNH6012LK3Q
Q
ID=8A
50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 14. Avalanche Energy vs. Junction
Temperature
1
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
0.001
0.01
D=0.9
D=0.7
RθJA (t)=r(t) * RθJA
RθJA=73.5/W
Duty Cycle, D=t1 / t2
0.1 1 10
t1, PULSE DURATION TIME (sec)
Figure 15. Transient Thermal Resistance
100
1000
DMNH6012LK3Q
Document number: DS37431 Rev. 1 - 2
5 of 7
www.diodes.com
June 2016
© Diodes Incorporated

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