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MBR20H100C 데이터시트 PDF




BCD에서 제조한 전자 부품 MBR20H100C은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 MBR20H100C 기능
기능 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
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MBR20H100C 데이터시트, 핀배열, 회로
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20H100C
General Description
Main Product Characteristics
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters. This
device is intended for use in medium voltage opera-
tion, and particularly, in high frequency circuits where
low switching losses and low noise are required.
IF(AV)
VRRM
TJ
VF(max)
2*10A
100V
175oC
0.64V
MBR20H100C is available in TO-220-3, TO-220-3(2)
and TO-220F-3 packages
Features
· Low Forward Voltage: 0.64V @125oC
· High Surge Capacity
· 175oC Operating Junction Temperature
· 20 A Total (10A Each Diode Leg)
· Guard-Ring for Stress Protection
· Pb-Free Package
Applications
· Power Supply Output Rectification
· Power Management
· Instrumentation
Mechanical Characteristics
· Case: Epoxy, Molded
· Epoxy Meets UL 94 V-0 @ 0.125 in
· Weight (Approximately):
2 Grams (TO-220-3, TO-220-3(2) and
TO-220F-3)
· Finish: All External Surfaces Corrosion Resistant
and Terminal
· Leads are Readily Solderable
· Lead Temperature for Soldering Purposes:
260oC Maximum for 10 Seconds
TO-220F-3
TO-220-3
TO-220-3(2)
Apr. 2009 Rev. 1. 2
Figure 1. Package Type of MBR20H100C
BCD Semiconductor Manufacturing Limited
1




MBR20H100C pdf, 반도체, 판매, 대치품
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Absolute Maximum Ratings (Each Diode Leg) (Note 1)
Data Sheet
MBR20H100C
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC=162oC
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC=160oC
Non Repetitive Peak Surge Current (Surge applied at rated
load conditions half wave, single phase, 60 Hz)
Operating Junction Temperature (Note 2)
Storage Temperature Range
Voltage Rate of Change (Rated VR)
ESD (Machine Model=C)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
TJ
TSTG
dv/dt
100
10
20
250
175
-65 to 175
10000
>400
V
A
A
A
oC
oC
V/µs
V
ESD (Human Body Model=3B)
>8000
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/RθJA.
Thermal Characteristics
Parameter
Symbol
Maximum Thermal Resistance
RθJC
RθJA
Condition
Junction to Case
TO-220-3/
TO-220-3(2)
TO-220F-3
Junction to Ambient
TO-220-3/
TO-220-3(2)
Value
2.0
2.5
60
Unit
oC/W
Apr. 2009 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
4

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MBR20H100C 전자부품, 판매, 대치품
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Typical Performance Characteristics (Continued)
10000
Data Sheet
MBR20H100C
1000
TJ=25oC
100
10
20 40 60 80 100
VR, Reverse Voltage (V)
Figure 6. Capacitance
14
12
10
8
6 Square
4
2
0
100 110 120 130 140 150 160 170 180
Case Temperature (oC)
Figure 7. Average Forward Current vs. Case Temperature (Square, Each Diode)
Apr. 2009 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
7

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MBR20H100C

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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MBR20H100C

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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