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CG7501AA 데이터시트 PDF




Cypress에서 제조한 전자 부품 CG7501AA은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 CG7501AA 기능
기능 4-Mbit (512 K x 8) nvSRAM
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CG7501AA 데이터시트, 핀배열, 회로
CG7501AA
4-Mbit (512 K × 8) nvSRAM
4-Mbit (512 K × 8/256 K × 16) nvSRAM
Features
45 ns access time
Internally organized as 512 K × 8
Hands off automatic STORE on power-down with only a small
capacitor
STORE to QuantumTrap non-volatile elements initiated by
software, device pin, or AutoStore on power-down
RECALL to SRAM initiated by software or power-up
Infinite read, write, and recall cycles
1 million STORE cycles to QuantumTrap
20 year data retention
Single 3 V +20, –10operation
Industrial temperature
Package
48-ball fine-pitch ball grid array (FBGA)
Pb-free and restriction of hazardous substances (RoHS)
compliant
Functional Description
The Cypress CG7501AA is a fast static RAM (SRAM), with a
non-volatile element in each memory cell. The memory is
organized as 512 K bytes of 8 bits each. The embedded
non-volatile elements incorporate QuantumTrap technology,
producing the world’s most reliable non-volatile memory. The
SRAM provides infinite read and write cycles, while independent
non-volatile data resides in the highly reliable QuantumTrap cell.
Data transfers from the SRAM to the non-volatile elements (the
STORE operation) takes place automatically at power-down. On
power-up, data is restored to the SRAM (the RECALL operation)
from the non-volatile memory. Both the STORE and RECALL
operations are also available under software control.
Logic Block Diagram
A0
A1
A2
A3
A4
A5
A6
A7
A8
A 17
A 18
DQ 0
DQ 1
DQ 2
DQ 3
DQ 4
DQ 5
DQ 6
DQ 7
QuantumTrap
2048 X 2048
STORE
STATIC RAM
ARRAY
2048 X 2048
RECALL
COLUMN I/O
COLUMN DEC
A9 A10 A11A12 A13A14A15 A16
VCC VCAP
POWER
CONTROL
STORE/RECALL
CONTROL
HSB
SOFTWARE
DETECT
-A14 A2
OE
CE
WE
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-82292 Rev. **
• San Jose, CA 95134-1709 • 408-943-2600
Revised September 5, 2012




CG7501AA pdf, 반도체, 판매, 대치품
CG7501AA
Pin Definitions
Pin Name I/O Type
Description
A0–A18
DQ0–DQ7
WE
Input Address inputs. Used to select one of the 524,288 bytes of the nvSRAM.
Input/Output Bidirectional data I/O lines. Used as input or output lines depending on operation.
Input
Write Enable input, Active LOW. When selected LOW, data on the I/O pins is written to the specific
address location.
CE Input Chip Enable input, Active LOW. When LOW, selects the chip. When HIGH, deselects the chip.
OE Input Output Enable, Active LOW. The active LOW OE input enables the data output buffers during read
cycles. I/O pins are tristated on deasserting OE HIGH.
VSS
VCC
HSB
Ground Ground for the device. Must be connected to the ground of the system.
Power supply Power supply inputs to the device.
Input/Output Hardware STORE Busy (HSB). When LOW this output indicates that a Hardware STORE is in progress.
When pulled LOW external to the chip it initiates a non-volatile STORE operation. After each Hardware
and Software STORE operation, HSB is driven HIGH for a short time (tHHHD) with standard output high
current, and then a weak internal pull-up resistor keeps this pin HIGH (external pull-up resistor connection
optional).
VCAP Power supply AutoStore Capacitor. Supplies power to the nvSRAM during power loss to store data from SRAM to
non-volatile elements.
NC No connect No Connect. This pin is not connected to the die.
Document Number: 001-82292 Rev. **
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CG7501AA 전자부품, 판매, 대치품
CG7501AA
Table 1. Mode Selection (continued)
CE WE OE A15–A0[3] Mode I/O Power
L
H
L
0x4E38
Read SRAM
Output data
Active[5]
0xB1C7
Read SRAM
Output data
0x83E0
Read SRAM
Output data
0x7C1F
Read SRAM
Output data
0x703F
Read SRAM
Output data
0x4B46
AutoStore Enable Output data
L
H
L
0x4E38
Read SRAM
Output data
Active ICC2[5]
0xB1C7
Read SRAM
Output data
0x83E0
Read SRAM
Output data
0x7C1F
Read SRAM
Output data
0x703F
Read SRAM
Output data
0x8FC0
Non-volatile
Output high Z
STORE
L
H
L
0x4E38
Read SRAM
Output data
Active[5]
0xB1C7
Read SRAM
Output data
0x83E0
Read SRAM
Output data
0x7C1F
Read SRAM
Output data
0x703F
Read SRAM
Output data
0x4C63
Non-volatile
Output high Z
RECALL
Preventing AutoStore
The AutoStore function is disabled by initiating an AutoStore
disable sequence. A sequence of read operations is performed
in a manner similar to the software STORE initiation. To initiate
the AutoStore disable sequence, the following sequence of CE
or OE controlled read operations must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x8B45 AutoStore Disable
The AutoStore is re-enabled by initiating an AutoStore enable
sequence. A sequence of read operations is performed in a
manner similar to the software RECALL initiation. To initiate the
AutoStore enable sequence, the following sequence of CE or OE
controlled read operations must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x4B46 AutoStore Enable
If the AutoStore function is disabled or re-enabled, a manual
STORE operation (hardware or software) must be issued to save
the AutoStore state through subsequent power-down cycles.
The part comes from the factory with AutoStore enabled and
0x00 written in all cells.
Data Protection
The CG7501AA protects data from corruption during low voltage
conditions by inhibiting all externally initiated STORE and write
operations. The low voltage condition is detected when VCC <
VSWITCH. If the CG7501AA is in a write mode (both CE and WE
are LOW) at power-up, after a RECALL or STORE, the write is
inhibited until the SRAM is enabled after tLZHSB (HSB to output
active). This protects against inadvertent writes during power-up
or brown out conditions.
Note
5. The six consecutive address locations must be in the order listed. WE must be HIGH during all six cycles to enable a non-volatile cycle.
Document Number: 001-82292 Rev. **
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부품번호상세설명 및 기능제조사
CG7501AA

4-Mbit (512 K x 8) nvSRAM

Cypress
Cypress

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