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EKI10198 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 EKI10198
기능 N Channel Trench Power MOSFET
제조업체 SANKEN
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EKI10198 데이터시트, 핀배열, 회로
100 V, 47 A, 13.2 mΩ Low RDS(ON)
N ch Trench Power MOSFET
EKI10198
Features
V(BR)DSS --------------------------------100 V (ID = 100 µA)
ID ---------------------------------------------------------- 47 A
RDS(ON) -------- 18.4 mΩ max. (VGS = 10 V, ID = 23.4 A)
Qg------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Package
TO-220
(4)
D
(1) (2) (3)
GDS
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Equivalent circuit
D(2)(4)
G(1)
S(3)
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source Voltage
VDS
Gate to Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
IDM
IS
ISM
Single Pulse Avalanche Energy
EAS
Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
IAS
PD
TJ
TSTG
Test conditions
TC = 25 °C
PW 100µs
Duty cycle 1 %
PW 100µs
Duty cycle 1 %
VDD = 50 V, L = 1 mH,
IAS =11.2 A, unclamped,
RG = 4.7 Ω
Refer to Figure 1
TC = 25 °C
Rating
100
± 20
47
94
47
94
126
23.3
116
150
55 to 150
Unit
V
V
A
A
A
A
mJ
A
W
°C
°C
EKI10198-DS Rev.1.3
May. 29, 2014
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
1




EKI10198 pdf, 반도체, 판매, 대치품
EKI10198
RDS(ON)-ID characteristics (typical)
VGS=10V
45
40
35
30 Tc = 125
25
75
20
15 25
10
5
0
0 10 20 30 40 50 60 70 80 90 100
ID (A)
VDS-VGS characteristics (typical)
Tc=25
0.8
0.7
0.6
0.5
0.4
0.3 ID=23.4A
ID=20.4A
0.2
ID=11.7A
0.1
0.0
0
5 10
VGS (V)
15
RDS(ON)-ID characteristics (typical)
VGS=4.5V
50
40
30 Tc = 125
75
20
25
10
0
0 10 20 30 40 50 60 70 80 90 100
ID (A)
IDR-VSD characteristics (typical)
Tc=25
100
90
80
70
60 VGS=10V
50
40 VGS=4.5V
30
3V
20
10 0V
0
0 0.5 1 1.5
VSD (V)
100
90
80
70
60
50
40
30
20
10
0
0
ID-VGS characteristics (typical)
VDS=5V
Tc =125
75
25
12345
VGS (V)
IDR-VSD characteristics (typical)
VDS=0V
100
90
80
70
60
50 Tc =125
40
75
30
20 25
10
0
0 0.5 1 1.5
VSD (V)
Capacitance-VDS characteristics (typical)
10000
1000
Ciss
Coss
VGS - Qg characteristics (typical)
15
10
Vth-Tc characteristics (typical)
3
2
100
Ta=25
VGS=0V
f =1MHz
10
0
10
20 30
VDS (V)
Crss
40 50
RDS(ON)-Tc characteristics (typical)
35
30
25
20
15
10
5
ID=23.4A
VGS=10V
0
25 50 75 100 125 150
Tc ()
5
Tc=25
VDS=50V
ID=23.4A
0
0 20 40 60
Qg (nC)
RDS(ON)-Tc characteristics (typical)
35
30
25
20
15
10
5 ID=11.7A
VGS=4.5V
0
25 50 75 100 125 150
Tc ()
1
ID=1mA
VGS=VDS
0
25 50 75 100 125 150
Tc ()
BVDSS-Tc characteristics (typical)
130
125
120
115
110
ID=1mA
VGS=0V
105
100
25 50 75 100 125 150
Tc ()
EKI10198-DS Rev.1.3
May. 29, 2014
SANKEN ELECTRIC CO.,LTD.
4

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EKI10198 전자부품, 판매, 대치품
EKI10198
OPERATING PRECAUTIONS
In the case that you use Sanken products or design your products by using Sanken products, the reliability largely
depends on the degree of derating to be made to the rated values. Derating may be interpreted as a case that an operation
range is set by derating the load from each rated value or surge voltage or noise is considered for derating in order to
assure or improve the reliability. In general, derating factors include electric stresses such as electric voltage, electric
current, electric power etc., environmental stresses such as ambient temperature, humidity etc. and thermal stress caused
due to self-heating of semiconductor products. For these stresses, instantaneous values, maximum values and minimum
values must be taken into consideration. In addition, it should be noted that since power devices or IC’s including power
devices have large self-heating value, the degree of derating of junction temperature affects the reliability significantly.
Because reliability can be affected adversely by improper storage environments and handling methods, please
observe the following cautions.
Cautions for Storage
Ensure that storage conditions comply with the standard temperature (5 to 35°C) and the standard relative humidity
(around 40 to 75%); avoid storage locations that experience extreme changes in temperature or humidity.
Avoid locations where dust or harmful gases are present and avoid direct sunlight.
Reinspect for rust on leads and solderability of the products that have been stored for a long time.
Cautions for Testing and Handling
When tests are carried out during inspection testing and other standard test periods, protect the products from power
surges from the testing device, shorts between the product pins, and wrong connections. Ensure all test parameters are
within the ratings specified by Sanken for the products.
Remarks About Using Thermal Silicone Grease
When thermal silicone grease is used, it shall be applied evenly and thinly. If more silicone grease than required is
applied, it may produce excess stress.
The thermal silicone grease that has been stored for a long period of time may cause cracks of the greases, and it
cause low radiation performance. In addition, the old grease may cause cracks in the resin mold when screwing the
products to a heatsink.
Fully consider preventing foreign materials from entering into the thermal silicone grease. When foreign material
is immixed, radiation performance may be degraded or an insulation failure may occur due to a damaged insulating
plate.
The thermal silicone greases that are recommended for the resin molded semiconductor should be used.
Our recommended thermal silicone grease is the following, and equivalent of these.
Type
Suppliers
G746 Shin-Etsu Chemical Co., Ltd.
YG6260 Momentive Performance Materials Japan LLC
SC102 Dow Corning Toray Co., Ltd.
Cautions for Mounting to a Heatsink
When the flatness around the screw hole is insufficient, such as when mounting the products to a heatsink that has
an extruded (burred) screw hole, the products can be damaged, even with a lower than recommended screw torque.
For mounting the products, the mounting surface flatness should be 0.05mm or less.
Please select suitable screws for the product shape. Do not use a flat-head machine screw because of the stress to
the products. Self-tapping screws are not recommended. When using self-tapping screws, the screw may enter the
hole diagonally, not vertically, depending on the conditions of hole before threading or the work situation. That
may stress the products and may cause failures.
Recommended screw torque:
Package
Recommended Screw Torque
TO-220, TO-220F
0.490 to 0.686 Nm (5 to 7 kgfcm)
TO-3P, TO-3PF, TO-247 0.686 to 0.882 Nm (7 to 9 kgfcm)
SLA 0.588 to 0.784 Nm (6 to 8 kgfcm)
EKI10198-DS Rev.1.3
May. 29, 2014
SANKEN ELECTRIC CO.,LTD.
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EKI10198

N Channel Trench Power MOSFET

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